NRVBD660CTT4G

Les images sont à titre de référence seulement

NRVBD660CTT4G

DIODE ARRAY SCHOTTKY 60V 3A DPAK

  • Fabricant
  • Mfr. Partie #NRVBD660CTT4G
  • Paquet DPAK-3
  • Fiche de données
  • En stock2637

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, SWITCHMODE™
ProductStatus Obsolete
DiodeConfiguration 1 Pair Common Cathode
DiodeType Schottky
Voltage-DCReverse(Vr)(Max) 60 V
Current-AverageRectified(Io)(perDiode) 3A
Voltage-Forward(Vf)(Max)@If 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr 100 µA @ 60 V
OperatingTemperature-Junction -65°C ~ 175°C
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

The NRVBD660CTT4G is a type of Schottky barrier diode, designed for applications requiring fast switching and high efficiency. It features a low forward voltage drop and rapid recovery time, making it suitable for power conversion, rectification, and voltage clamping in various electronic circuits.
Key specifications include a maximum reverse voltage rating, typically around 60V, and a forward current capability, often up to 6A. The device's construction allows for minimal switching losses, contributing to overall energy efficiency in circuits.
Common applications include power supplies, DC-DC converters, and inrush current protection. The NRVBD660CTT4G is packaged in a compact form, optimizing PCB space while providing reliable performance. Its design also ensures thermal stability, which is crucial for high-temperature environments.
Overall, this diode is a favored choice for engineers looking to enhance performance in power management systems and other electronic applications.

Features

The NRVBD660CTT4G is a Schottky barrier diode designed for high-speed switching applications. Key features include:
1. Low Forward Voltage Drop: Enhances efficiency by minimizing power loss during conduction.
2. Fast Recovery Time: Suitable for high-frequency applications, reducing switching losses.
3. High Current Rating: Supports up to 60A, making it suitable for various power management applications.
4. Low Reverse Leakage Current: Ideal for energy-sensitive designs, contributing to better performance in battery-operated devices.
5. Temperature Range: Operates effectively in a broad temperature range, ensuring reliability in diverse environments.
6. Surface Mount Package: Configured in a TO-220 package for ease of integration into circuits with minimal space requirements.
7. Applications: Commonly used in power supplies, DC-DC converters, and automotive electronics.
These features make the NRVBD660CTT4G a reliable choice for modern electronic designs requiring efficiency and performance.

Package

The NRVBD660CTT4G is packaged in a SOT-23-3 surface mount package.

Pinout

The NRVBD660CTT4G is a Schottky barrier rectifier diode with a pin count of 2. Its primary functions are to provide fast switching and low forward voltage drop, making it suitable for applications such as power management, converters, and rectification in power supplies.
In terms of specifications, it typically supports a reverse voltage rating of 60V and a forward current rating of 0.6A. The device is housed in a compact SOT-23 package, which helps save space on printed circuit boards. Its low leakage current and high efficiency make it ideal for use in high-frequency applications.

Manufacturer

The NRVBD660CTT4G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital components, as well as sensors and integrated circuits. The company serves various industries such as automotive, industrial, communications, consumer electronics, and computing. With a focus on energy-efficient technologies and innovation, ON Semiconductor plays a significant role in advancing semiconductor applications for a more sustainable future.

Application

The NRVBD660CTT4G is a dual Schottky diode, commonly used in applications such as power supply circuits, voltage regulation, and rectification. Its low forward voltage drop and fast switching capabilities make it suitable for use in DC-DC converters, battery charging systems, and as protection diodes in various electronic devices. It is also utilized in RF applications and small signal rectification.

Equivalent

The NRVBD660CTT4G is a dual Schottky rectifier with a voltage rating of 60V and a current rating of 2A. Equivalent products include the MBRD660CT, SRD660, and STPS2L60. Always check specific datasheets for precise specifications and ensure compatibility with your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire