NRVB5100MFST1G

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NRVB5100MFST1G

DIODE SCHOTTKY 100V 5A 5DFN

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  • Mfr. Partie #NRVB5100MFST1G
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Spécifications

Part Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 5A
Voltage - Forward (Vf) (Max) @ If 980 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number NRVB5100

Vue d'ensemble

Description

The NRVB5100MFST1G is a high-performance Schottky diode designed for various applications, including power management and rectification in switching power supplies. It features a low forward voltage drop and fast switching capabilities, making it suitable for applications requiring efficiency and rapid response times. With a reverse voltage rating of 100V and a forward current rating of 5A, this diode effectively minimizes conduction losses.
The package type is typically a surface-mount format, which aids in space-saving designs and improves thermal performance. Its low recovery charge and low leakage current characteristics enhance overall circuit reliability. The NRVB5100MFST1G is often utilized in consumer electronics, automotive applications, and industrial systems where power efficiency is critical.
Overall, the NRVB5100MFST1G is a versatile component that plays a crucial role in improving the performance of electronic circuits by ensuring efficient power conversion and management.

Features

The NRVB5100MFST1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 100V, it can handle high voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 51A, providing significant power handling capability.
3. R_DS(on): The device boasts a low on-resistance (R_DS(on)), typically around 10mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: It offers good thermal characteristics, supporting reliable operation in demanding environments.
6. Package: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the NRVB5100MFST1G suitable for applications like DC-DC converters, motor drives, and power supplies.

Package

The NRVB5100MFST1G is typically packaged in a surface mount device (SMD) format, specifically in a SOT-23 package. This package type is compact and suitable for automated assembly in electronic circuits.

Pinout

The NRVB5100MFST1G is a dual N-channel MOSFET housed in a surface-mount package with a total of 8 pins. The pin functions are as follows:
1. Gate1 (G1): Controls the switching of the first N-channel MOSFET.
2. Drain1 (D1): The output for the first MOSFET, where the current flows out.
3. Source1 (S1): The source terminal for the first MOSFET, typically connected to ground.
4. Gate2 (G2): Controls the switching of the second N-channel MOSFET.
5. Drain2 (D2): The output for the second MOSFET.
6. Source2 (S2): The source terminal for the second MOSFET.
7. Drain (Common): Often used for connecting both drains together, depending on the application.
8. Source (Common): Often used for connecting both sources together.
The NRVB5100MFST1G is suitable for applications such as power management and load switching.

Manufacturer

The NRVB5100MFST1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in a wide range of products including power management, analog, sensors, and discrete components. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has positioned itself as a key player in the semiconductor industry, focusing on energy-efficient technologies and innovative solutions to meet the demands of modern electronics.

Application

The NRVB5100MFST1G is a high-speed, low-on-resistance N-channel MOSFET primarily used in power management applications. Its application areas include switching power supplies, motor control, and DC-DC converters. It is also utilized in load switching, battery management systems, and various consumer electronics to efficiently control power and enhance energy efficiency.

Equivalent

The NRVB5100MFST1G is a Schottky diode. Equivalent products include the MBR5100, SRB5100, and 1N5819. Always check specific datasheets for voltage and current ratings to ensure compatibility.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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