NRVB140ESFT1G

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NRVB140ESFT1G

DIODE SCHOTTKY 40V 1A SOD123FL

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  • Mfr. Partie #NRVB140ESFT1G
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Spécifications

Part Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 560 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 30 µA @ 40 V
Mounting Type Surface Mount
Package / Case SOD-123F
Supplier Device Package SOD-123FL
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number NRVB140
Grade Automotive
Qualification AEC-Q101

Vue d'ensemble

Description

The NRVB140ESFT1G is a part of the NRVB series, specifically a low-voltage, high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for efficient switching applications in power management systems, including DC-DC converters, power supplies, and motor drivers.
Key features include a low on-resistance, which minimizes power loss during operation, and a fast switching speed, which enhances overall system efficiency. The device typically operates at a voltage rating of around 40V and offers a continuous drain current, making it suitable for various consumer and industrial electronics applications.
The NRVB140ESFT1G is housed in a compact package, facilitating easy integration into circuit designs while providing thermal efficiency. Its reliability and performance make it a versatile choice for engineers looking to optimize power efficiency in their designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The NRVB140ESFT1G is a N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: It can handle continuous drain currents (I_D) up to 14A, allowing for efficient power handling.
3. R_DS(on): Low on-resistance (around 15mΩ), which minimizes power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is typically between 1V and 2.5V, facilitating easy drive with logic-level signals.
5. Package Type: It comes in a surface-mount SO-8 package, suitable for compact designs.
6. Thermal Performance: Good thermal conductivity, allowing for reliable operation under higher temperatures.
7. Applications: Ideal for use in DC-DC converters, power management systems, and other electronic applications requiring efficient switching.
These features make the NRVB140ESFT1G suitable for modern electronic devices and automotive applications.

Package

The NRVB140ESFT1G is packaged in a DPAK (TO-252) surface mount package. This type is designed for efficient thermal performance and space-saving on printed circuit boards.

Pinout

The NRVB140ESFT1G is a voltage regulator diode, specifically a 40V, 1A, low dropout (LDO) linear voltage regulator. It is housed in a SOT-23 package and has a total of 3 pins. The pin configuration is as follows:
1. Pin 1 (Input/Anode): This pin is connected to the power supply voltage.
2. Pin 2 (Ground/Cathode): This pin is the ground reference for the circuit.
3. Pin 3 (Output): This pin provides the regulated output voltage.
The NRVB140ESFT1G is designed for low dropout applications, enabling it to provide stable voltage regulation with minimal input-output voltage differential. It is commonly used in various electronic applications to ensure consistent voltage supply.

Manufacturer

The NRVB140ESFT1G is manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. ON Semiconductor designs and produces a wide range of products, including analog, logic, timing, and power management devices, along with integrated circuits and sensors for various applications. The company serves multiple sectors, such as automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through a series of acquisitions and expansions, positioning itself as a key player in the semiconductor industry. Their focus is on providing energy-efficient solutions to meet the demands of modern technology.

Application

The NRVB140ESFT1G is a low-voltage N-channel MOSFET commonly used in applications such as power management, DC-DC converters, load switching, and motor control. Its features, including low on-resistance and fast switching speeds, make it suitable for automotive, consumer electronics, and industrial applications where efficiency and thermal performance are critical.

Equivalent

The NRVB140ESFT1G is a N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and STP16NF06. Ensure to compare specifications like voltage rating, current handling, and on-resistance to confirm compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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