NP100P06PDG-E1-AY

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NP100P06PDG-E1-AY

MOSFET P-CH 60V 100A TO263

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  • Mfr. Partie #NP100P06PDG-E1-AY
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Spécifications

Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 10 V
Power Dissipation (Max) 1.8W (Ta), 200W (Tc)
Operating Temperature 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number NP100P06

Vue d'ensemble

Description

The NP100P06PDG-E1-AY is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. Manufactured by Nexperia, it features a N-channel configuration, which allows it to conduct current when a positive voltage is applied to the gate relative to the source. This component is typically used in power management and conversion circuits, offering low on-resistance and fast switching capabilities, making it suitable for applications such as power supplies, motor drivers, and LED drivers.
Key specifications include a maximum drain-source voltage (V_DS) and a continuous drain current (I_D) rating, allowing it to handle significant power levels. The NP100P06PDG-E1-AY is housed in a compact package that facilitates thermal management and efficient PCB design. Its reliability and performance make it a popular choice in various electronic circuits requiring robust power handling and efficiency.

Features

The NP100P06PDG-E1-AY is a power MOSFET designed for high-performance applications. Key features include:
1. Type: N-channel MOSFET, suitable for high-speed switching.
2. Voltage Rating: Typically operates at up to 60V, making it ideal for various power management applications.
3. Current Rating: It can handle continuous currents of up to 100A, providing robust performance.
4. Low RDS(on): Features low on-resistance, which reduces conduction losses and enhances efficiency.
5. Fast Switching Speed: Enables quick turn-on and turn-off, beneficial for high-frequency applications.
6. Thermal Performance: Designed with improved thermal characteristics to dissipate heat effectively, ensuring reliability.
7. Package Type: Offered in a TO-220 package for easy mounting and heat dissipation.
These features make the NP100P06PDG-E1-AY suitable for applications such as power supplies, motor drives, and other electronic devices requiring efficient power management.

Package

The NP100P06PDG-E1-AY is housed in a DPAK (TO-252) package type. This package is commonly used for power MOSFETs due to its efficient thermal performance and compact size, suitable for various electronic applications.

Pinout

The NP100P06PDG-E1-AY is a N-channel power MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. By applying a voltage to the gate, you can turn the device on or off.
2. Drain (D): This is the output pin where the load connects. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the reference point for the gate voltage.
The device is used in various applications, including power management, switching regulators, and motor control, due to its efficient switching capabilities.

Manufacturer

The NP100P06PDG-E1-AY is manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. ON Semiconductor designs, manufactures, and sells a wide range of semiconductor products, including analog, digital, and mixed-signal integrated circuits, discrete components, and power management devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, focusing on energy-efficient solutions and advanced technologies in the semiconductor sector.

Application

The NP100P06PDG-E1-AY is a power MOSFET used in various applications, including power management, DC-DC converters, motor drives, and switching power supplies. It is suitable for use in automotive, industrial, and consumer electronics due to its high efficiency and fast switching capabilities.

Equivalent

The NP100P06PDG-E1-AY is a N-channel MOSFET. Equivalent products include the IRF100P06, STP100P06, and BUK100P06-55. Always verify specifications such as voltage, current ratings, and package compatibility before substituting.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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