NGTB50N120FL2WG

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NGTB50N120FL2WG

IGBT 1200V 100A 535W TO247

  • Fabricant
  • Mfr. Partie #NGTB50N120FL2WG
  • Paquet TO-247
  • Fiche de données
  • En stock6659

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Spécifications

Package Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 100 A
Current-CollectorPulsed(Icm) 200 A
Vce(on)(Max)@VgeIc 2.2V @ 15V, 50A
Power-Max 535 W
SwitchingEnergy 4.4mJ (on), 1.4mJ (off)
InputType Standard
GateCharge 311 nC
Td(on/off)@25°C 118ns/282ns
TestCondition 600V, 50A, 10Ohm, 15V
ReverseRecoveryTime(trr) 256 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The NGTB50N120FL2WG is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various power applications. It features a voltage rating of 1200V and a maximum current rating of 50A, making it suitable for high-voltage and high-current switching applications. The device is known for its low on-resistance (Rds(on)), which facilitates efficient power management by minimizing power losses during operation.
This MOSFET is typically used in applications such as power supplies, motor drives, and inverter circuits, where effective switching performance is crucial. The package type is generally in a TO-247 format, which aids in thermal management. Additionally, the NGTB50N120FL2WG supports fast switching speeds, which is beneficial for high-frequency applications.
With its robust performance characteristics, it is ideal for engineers looking to enhance the efficiency and reliability of their electronic designs. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The NGTB50N120FL2WG is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous drain current (I_D) of 50A, it provides robust performance in power conversion and motor control.
3. R_DS(on): The low on-state resistance (R_DS(on)) minimizes power loss during operation, improving efficiency.
4. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easier drive and control.
5. Package Type: Packaged in a TO-220 form factor, it offers effective thermal management and is easy to mount on heatsinks.
6. Fast Switching: Designed for fast switching times, making it ideal for applications in switch-mode power supplies and converters.
These attributes make the NGTB50N120FL2WG suitable for a variety of applications including automotive, industrial, and consumer electronics.

Package

The NGTB50N120FL2WG is typically packaged in a TO-247 style package. This package type is designed for high-power applications, providing efficient heat dissipation and robust performance in semiconductor devices.

Pinout

The NGTB50N120FL2WG is a 1200V N-channel MOSFET from the Nexperia product line, specifically designed for high-voltage applications. It features a TO-220 package with a total of 3 pins.
Pin Function:
1. Gate (G): This pin is used to control the MOSFET. A positive voltage relative to the source turns the device on, while 0V turns it off.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the reference point for the gate voltage.
The device is suitable for applications such as switch-mode power supplies, motor drives, and other high-efficiency power conversion systems.

Manufacturer

The NGTB50N120FL2WG is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. The company specializes in power management, analog, and logic devices, as well as custom devices. ON Semiconductor serves various industries, including automotive, industrial, communications, and consumer electronics. Their products are designed to meet the increasing demand for efficient power solutions and innovative technology, focusing on sustainability and energy efficiency.

Application

The NGTB50N120FL2WG is a high-voltage N-channel MOSFET primarily used in applications such as industrial power supplies, motor drives, and renewable energy systems. Its features make it suitable for high-efficiency switching in power converters, inverters, and electric vehicles. Additionally, it is utilized in telecom equipment and high-voltage applications due to its robust performance and thermal management capabilities.

Equivalent

The NGTB50N120FL2WG is a 1200V, 50A IGBT module. Equivalent products include the Infineon FGH50T120, Mitsubishi MGF50N120, and ON Semiconductor NGTB50N120FL3. When searching for alternatives, ensure they match specifications such as voltage, current rating, and thermal characteristics. Always consult datasheets for detailed comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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