NAND512W3A2SN6E

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NAND512W3A2SN6E

IC FLASH 512MBIT PARALLEL 48TSOP

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  • Mfr. Partie #NAND512W3A2SN6E
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Spécifications

Part Status Obsolete
Base Product Number NAND512
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 50ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Packaging Tray
Access Time 50 ns

Vue d'ensemble

Description

The NAND512W3A2SN6E is a non-volatile NAND flash memory device produced by Micron Technology. It features a 512 Megabit (64 Megabyte) capacity and utilizes a serial interface for data communication, typically employing the SPI (Serial Peripheral Interface) protocol. This memory device is suitable for various applications, including consumer electronics, industrial applications, and embedded systems, due to its small form factor and low power consumption.
Key characteristics include fast read and write speeds, endurance ratings suitable for write-intensive applications, and reliability features such as error correction capabilities. It is designed to operate in a wide temperature range, making it versatile for different environments. The NAND512W3A2SN6E's architecture allows for efficient data storage and retrieval, making it a preferred choice for applications requiring compact and reliable storage solutions.

Features

The NAND512W3A2SN6E is a 512Mb (64MB) NAND Flash memory device. Key features include:
1. Density: 512Mb capacity, suitable for various applications requiring moderate storage.
2. Interface: NAND Flash interface with support for ONFI (Open NAND Flash Interface) standards.
3. Organization: SLC (Single-Level Cell) architecture for enhanced reliability and performance.
4. Data Transfer Rates: High-speed read and write capabilities, optimizing data access.
5. Endurance: Typically supports around 10,000 program/erase cycles, ensuring durability for intensive applications.
6. Block Erase: Contains multiple blocks (usually 128KB to 2MB each) that can be erased independently.
7. Power Consumption: Low active and standby power consumption, making it energy-efficient for portable devices.
8. Temperature Range: Operates within a wide temperature range, suitable for industrial and automotive applications.
This device is commonly used in consumer electronics, embedded systems, and other applications requiring reliable non-volatile storage.

Package

The NAND512W3A2SN6E comes in a TSOP (Thin Small Outline Package) type package. This package design is commonly used for NAND flash memory devices, offering a compact footprint suitable for various applications.

Pinout

The NAND512W3A2SN6E is a NAND flash memory device with a pin count of 8. It operates using a serial interface and is designed for applications requiring non-volatile storage.
Key functions include:
1. Memory Capacity: 512 Mbit (64 MB) of storage.
2. Data Input/Output: It supports read, write, and erase operations.
3. Power Supply: Operates at low voltage, typically around 2.7V to 3.6V.
4. Access Speed: Offers fast access times suitable for various embedded applications.
5. Package Type: Available in a compact package for space-constrained designs.
This device is typically used in consumer electronics, automotive applications, and other embedded systems requiring reliable data storage.

Manufacturer

The manufacturer of the NAND512W3A2SN6E is Micron Technology, Inc. Micron is a leading American producer of semiconductor devices, particularly known for its memory and storage solutions, including DRAM, NAND flash, and hybrid memory. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse range of markets, including computing, mobile, and automotive sectors. The company is a key player in the global semiconductor industry and focuses on innovation and technology development to meet the increasing demand for data storage and memory solutions.

Application

The NAND512W3A2SN6E is a 512Mb NAND flash memory chip used in various applications such as portable electronics, consumer devices, industrial equipment, and automotive systems. It is commonly utilized for data storage in smartphones, tablets, digital cameras, and USB drives, enabling high-speed data transfer and reliable storage solutions in these devices.

Equivalent

The NAND512W3A2SN6E chip is a 512Mb NAND flash memory. Equivalent products include:
1. MT29F512G08CBAAA (Micron)
2. K9F1G08U0M (Samsung)
3. 29F512G08CFAAA (Micron)
4. W29N02GVS (Winbond)
Ensure to check specific characteristics such as package type, voltage, and access time for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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3. Transfert bancaire

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