NAND01GR3B2CZA6E

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NAND01GR3B2CZA6E

IC FLASH 1GBIT PARALLEL 63VFBGA

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Spécifications

Part Status Obsolete
Base Product Number NAND01
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-TFBGA
Supplier Device Package 63-VFBGA (9.5x12)
Packaging Tray
Access Time 25 ns

Vue d'ensemble

Description

The NAND01GR3B2CZA6E is a NAND Flash memory chip manufactured by STMicroelectronics. It features a 1 Gbit (128 MB) capacity and is part of the NAND Flash memory family, which is widely used in various applications such as smartphones, tablets, and other embedded systems. This particular model is designed for high-density data storage with a focus on performance and reliability.
It operates on a 3.3V supply voltage and utilizes a serial interface for data communication, making it easy to integrate into different electronic devices. The chip supports various features like page programming, block erasing, and multiple read modes, enabling efficient data management. Its small form factor and low power consumption make it suitable for portable applications. Overall, the NAND01GR3B2CZA6E is an effective solution for applications requiring compact, durable, and high-speed memory storage.

Features

The NAND01GR3B2CZA6E is a 1 Gbit (128 MB) NAND Flash memory chip produced by Micron Technology. Key features include:
1. Density: 1 Gbit capacity, suitable for a variety of applications.
2. Interface: SPI (Serial Peripheral Interface) for easy integration into systems.
3. Architecture: Multi-level cell (MLC) technology, offering a balance between performance and cost.
4. Endurance: Typically rated for 3,000 program/erase cycles, making it suitable for consumer electronics and industrial applications.
5. Power Consumption: Low power modes for energy efficiency, critical for battery-operated devices.
6. Temperature Range: Operating temperature range of -40°C to +85°C, suitable for automotive and industrial use.
7. Package: Available in a small package, allowing for space-efficient designs in compact devices.
This chip is commonly used in smartphones, tablets, and embedded systems, providing reliable data storage and retrieval.

Package

The NAND01GR3B2CZA6E is packaged in a 8-pin SOIC (Small Outline Integrated Circuit) package.

Pinout

The NAND01GR3B2CZA6E is a 1Gb (128MB) NAND flash memory device. It features a total of 48 pins. The key functions of these pins include:
- Data Inputs/Outputs (I/O): Pins DQ0 to DQ7 for data transfer.
- Command Latch Enable (CLE): Pin for command input.
- Address Latch Enable (ALE): Pin for address input.
- Chip Enable (CE): Pin to enable the device.
- Write Enable (WE): Pin to initiate a write operation.
- Read Enable (RE): Pin to initiate a read operation.
- Ready/Busy (R/B): Pin for status indication of the device.
- Ground (GND): Power ground pins.
- Power Supply (VCC): Power supply pins.
- Reset (RST): Pin for resetting the device.
This configuration supports various operations like reading, writing, and erasing memory cells, making it suitable for applications like data storage in consumer electronics.

Manufacturer

The NAND01GR3B2CZA6E is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of products, including microcontrollers, memory chips, and sensors, used in various applications such as automotive, industrial, consumer electronics, and communication systems. The company is recognized for its innovation in the semiconductor industry and plays a significant role in developing technologies for the Internet of Things (IoT) and other advanced electronic solutions.

Application

The NAND01GR3B2CZA6E is a 1Gbit NAND flash memory device primarily used in consumer electronics, such as smartphones, tablets, and digital cameras. It also finds applications in embedded systems, automotive electronics, and industrial devices, where non-volatile storage is essential. Its compact size and high performance make it suitable for applications requiring quick data access and reliability.

Equivalent

The NAND01GR3B2CZA6E is a 1Gb NAND Flash memory chip. Equivalent products include the Micron MT29F1G01ABAEAWP and the Samsung K9F1G08U0M. Additionally, other similar devices from brands like Toshiba (TH58NVG1S3HBAA) and SK Hynix may also be alternatives. Always check specific datasheets for compatibility and specifications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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