N25Q256A11EF840E

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N25Q256A11EF840E

IC FLASH 256MBIT SPI 8VDFPN

  • Fabricant
  • Mfr. Partie #N25Q256A11EF840E
  • Paquet PDFN-8
  • Fiche de données
  • En stock7564

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Spécifications

Package Tray
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 256Mb (64M x 4)
MemoryInterface SPI
ClockFrequency 108 MHz
WriteCycleTime-WordPage 8ms, 5ms
Voltage-Supply 1.7V ~ 2V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-VDFN Exposed Pad

Vue d'ensemble

Description

The N25Q256A11EF840E is a high-performance NOR flash memory chip produced by Micron Technology under the N25Q series. It features a capacity of 256 megabits (32 megabytes) and is designed for applications requiring fast read and write speeds. This chip supports the Serial Peripheral Interface (SPI), making it suitable for embedded systems, consumer electronics, and industrial applications.
Key features include:
- Read Speed: Up to 104 MHz, allowing quick data retrieval.
- Write/Erase Cycles: Supports multiple program and erase cycles, ensuring durability.
- Low Power Consumption: Ideal for battery-operated devices.
- Multiple I/O: Offers single, dual, and quad SPI modes for flexible interfacing.
The N25Q256A11EF840E is commonly used in firmware storage, data logging, and code execution in various electronic devices. Its reliability and performance make it a preferred choice for engineers looking to implement efficient and high-speed memory solutions in their projects.

Features

The N25Q256A11EF840E is a 256 Mb NOR Flash memory chip from Numonyx, featuring the following key attributes:
1. Memory Density: 256 Megabits (32 Megabytes) of non-volatile storage.
2. Interface: Supports SPI (Serial Peripheral Interface) with Quad-SPI capabilities for higher data transfer rates.
3. Speed: Offers high-speed read operations, with a typical read speed of 104 MHz in Quad-SPI mode.
4. Voltage Range: Operates on a supply voltage of 2.7V to 3.6V, making it compatible with various low-power applications.
5. Endurance: Supports up to 100,000 program/erase cycles.
6. Data Retention: Retains data for 20 years at 85°C, ensuring long-term reliability.
7. Features: Includes functions like sector protection, deep power-down mode, and fast read access.
8. Packaging: Available in various packages, including WSON and SOIC, to suit different application needs.
This memory chip is suitable for applications in automotive, industrial, and consumer electronics where reliable non-volatile storage is required.

Package

The N25Q256A11EF840E is packaged in a WSON (Thin Fine-Pitch Quad Flat No-leads) package type, which is designed for high-density applications. It features a compact footprint and is suitable for surface mounting on PCBs.

Pinout

The N25Q256A11EF840E is a 256 Mb (32 MB) NOR Flash memory device from Micron Technology. It features a total of 8 pins in a standard SOIC-8 package. The pin functions are as follows:
1. VCC: Power supply (typically 2.7V to 3.6V).
2. GND: Ground.
3. SCK: Serial Clock input.
4. CS#: Chip Select (active low).
5. MOSI: Master Out Slave In (data input).
6. MISO: Master In Slave Out (data output).
7. WP#: Write Protect (active low, used for write protection).
8. RESET#: Reset (active low, used to reset the device).
The N25Q256A supports various interfaces, including Serial Peripheral Interface (SPI), and is designed for applications requiring non-volatile storage with fast read access.

Manufacturer

The N25Q256A11EF840E is manufactured by Micron Technology, Inc. Micron is a leading global manufacturer of memory and storage solutions, specializing in DRAM, NAND flash memory, and NOR flash memory products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including consumer electronics, automotive, industrial, and data center applications. The company is known for its innovation in memory technology and its commitment to advancing memory and storage solutions to meet the growing demands of data-driven applications.

Application

The N25Q256A11EF840E is a 256 Mb NOR Flash memory device commonly used in various applications, including consumer electronics, automotive systems, industrial control, and IoT devices. Its features support firmware storage, data logging, and code execution in applications requiring fast read speeds and reliability. It is ideal for firmware updates, boot code storage, and other embedded systems where non-volatile memory is essential.

Equivalent

The N25Q256A11EF840E chip, a 256Mb NOR Flash memory, has equivalent products such as Micron MT25QL256ABA and Winbond W25Q256JV. These alternatives offer similar specifications in terms of capacity, interface (SPI), and performance characteristics. Always verify specific requirements and compatibility before substituting components.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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