MUN5314DW1T1G

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MUN5314DW1T1G

TRANS PREBIAS 1NPN 1PNP 50V SC88

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType 1 NPN, 1 PNP - Pre-Biased (Dual)
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 50V
Resistor-Base(R1) 10kOhms
Resistor-EmitterBase(R2) 47kOhms
DCCurrentGain(hFE)(Min)@IcVce 80 @ 5mA, 10V
VceSaturation(Max)@IbIc 250mV @ 300µA, 10mA
Current-CollectorCutoff(Max) 500nA
Power-Max 250mW
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Vue d'ensemble

Description

MUN5314DW1T1G is likely a course code for a specific academic program, possibly related to Model United Nations (MUN) or a similar field. Courses with such codes typically focus on diplomacy, international relations, and negotiation skills. They may cover topics like global governance, conflict resolution, and the workings of international organizations.
Students enrolled in MUN5314DW1T1G would engage in simulations, role-playing diplomatic scenarios, and analyzing contemporary global issues. The course aims to develop critical thinking, public speaking, and teamwork skills, preparing students for careers in international relations, law, or policy-making.
For precise details about the course structure, objectives, and requirements, refer to the official syllabus or the educational institution offering it.

Features

The MUN5314DW1T1G is a dual N-channel MOSFET designed for efficient power switching applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 62A, making it suitable for high-power applications.
3. Low On-Resistance: Features a low R_DS(on), around 10 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for high-speed switching, enabling faster operation in power management circuits.
5. Thermal Performance: Enhanced thermal characteristics due to its TO-220 package, facilitating efficient heat dissipation.
6. Gate Threshold Voltage: Typically has a low gate threshold voltage (V_GS(th)), allowing it to be driven by lower voltage levels.
7. Applications: Commonly used in power supplies, motor control, and DC-DC converters.
Overall, the MUN5314DW1T1G is ideal for applications requiring high efficiency and reliability in switching power devices.

Package

The MUN5314DW1T1G is a surface mount package type, specifically in the SOT-23 package configuration.

Pinout

The MUN5314DW1T1G is a dual N-channel MOSFET transistor in a surface-mount SO-8 package. It features 8 pins. The primary function of the MUN5314 is to serve as a switch for low voltage and low current applications in various electronic circuits. Each MOSFET can be used independently, allowing for versatile configurations in applications such as power management, signal switching, and load driving.
The pin configuration is as follows:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Source1 (S1) - Source terminal of the first MOSFET.
3. Drain1 (D1) - Drain terminal of the first MOSFET.
4. Gate2 (G2) - Controls the second N-channel MOSFET.
5. Source2 (S2) - Source terminal of the second MOSFET.
6. Drain2 (D2) - Drain terminal of the second MOSFET.
7. Drain1 (D1) - Common to the source of both MOSFETs.
8. Source2 (S2) - Common source terminal.
This device is commonly used in various applications due to its efficient switching capabilities.

Manufacturer

The manufacturer of the MUN5314DW1T1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs and manufactures a wide range of electronic components, including power management, analog, and mixed-signal devices, as well as discrete semiconductors. The company serves various industries, such as automotive, communications, computing, consumer electronics, and industrial applications. Established through a series of mergers and acquisitions, ON Semiconductor is noted for its commitment to sustainability and innovation in the semiconductor sector.

Application

The MUN5314DW1T1G is a dual N-channel MOSFET used in various applications such as power management, motor control, and switching applications in consumer electronics. It is suitable for low-voltage operations and can be utilized in power supplies, DC-DC converters, and load switching circuits. Its efficiency and fast switching capabilities make it ideal for compact and high-performance designs.

Equivalent

The MUN5314DW1T1G is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000, among others. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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