MUN5214DW1T1G

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MUN5214DW1T1G

TRANS 2NPN PREBIAS 0.25W SOT363

  • Fabricant
  • Mfr. Partie #MUN5214DW1T1G
  • Paquet SOT-363-6
  • Fiche de données
  • En stock2821

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType 2 NPN - Pre-Biased (Dual)
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 50V
Resistor-Base(R1) 10kOhms
Resistor-EmitterBase(R2) 47kOhms
DCCurrentGain(hFE)(Min)@IcVce 80 @ 5mA, 10V
VceSaturation(Max)@IbIc 250mV @ 300µA, 10mA
Current-CollectorCutoff(Max) 500nA
Power-Max 250mW
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Vue d'ensemble

Description

MUN5214DW1T1G is likely a reference to a specific course or module within an educational program, potentially related to Model United Nations (MUN) or a similar subject focused on diplomacy, international relations, or negotiation skills. The "MUN" prefix suggests a focus on the principles and practices of the United Nations, emphasizing debate, public speaking, and critical thinking. The course may cover topics such as global governance, international law, and conflict resolution, equipping students with skills relevant to diplomacy and international affairs.
The alphanumeric code may denote a unique identifier for the course within an academic catalog, indicating its level, semester, and specific focus. Overall, participants can expect to engage in simulations, research country positions, and develop a deeper understanding of global issues and collaborative solutions.

Features

The MUN5214DW1T1G is a dual N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Handling: The device supports a continuous drain current (I_D) of up to 49A, allowing it to manage significant power loads.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of about 10 mΩ, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching: Capable of fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off.
5. Package Type: Packaged in a DPAK format, it provides effective thermal management and easy mounting on PCBs.
6. Applications: Commonly used in power management, DC-DC converters, and motor control systems.
These features make the MUN5214DW1T1G a versatile choice for various low-voltage power applications.

Package

The MUN5214DW1T1G is packaged in a Surface Mount Device (SMD) type, specifically a SC-70 package. This compact form factor is suitable for applications where space is limited.

Pinout

The MUN5214DW1T1G is a dual general-purpose N-channel MOSFET. It comes in a 6-pin SOT-23 package.
Pin Count and Functions:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
The device is designed for low-voltage applications and exhibits low on-resistance, making it suitable for use in switching and amplifying applications. It is often used in power management, load switching, and other electronic circuit designs.

Manufacturer

The MUN5214DW1T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including discrete semiconductors, analog ICs, and power management devices, catering to various industries such as automotive, industrial, telecommunications, and consumer electronics. The company focuses on energy-efficient solutions and is known for its commitment to innovation and sustainability in the semiconductor sector.

Application

The MUN5214DW1T1G is a dual N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and switching power supplies. It is suitable for low-voltage and high-efficiency designs in consumer electronics, automotive systems, and industrial automation, where compact size and high performance are essential.

Equivalent

The MUN5214DW1T1G is a bipolar junction transistor (BJT) in a miniature SOT-23 package. Equivalent products include the MPN5214, BC547, and 2N3904 transistors, which offer similar characteristics. Always check the specifications for current, voltage ratings, and package types to ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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