MT53E512M32D2NP-046 WT:E

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MT53E512M32D2NP-046 WT:E

DRAM DRAM LPDDR4 Z11N 8Gb

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  • Mfr. Partie #MT53E512M32D2NP-046 WT:E
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  • Fiche de données
  • En stock25259

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Spécifications

Packaging Tray
Standard Pack Qty 1360

Vue d'ensemble

Description

The MT53E512M32D2NP-046 WT:E is a DRAM memory chip produced by Micron Technology. It is part of the DDR4 (Double Data Rate 4) family and is designed for high-performance computing applications. This specific model features a capacity of 512 Megabits (64 Megabytes) and is structured as a 32-bit wide data bus, which allows for efficient data transfer rates.
Key features include a data rate of 1600 MHz (indicative of the ‘046’ speed grade) and low power consumption, making it suitable for applications requiring energy efficiency. The "WT:E" designation typically refers to the package type and environmental ratings, indicating that it meets specific industrial standards for reliability.
Additionally, this DRAM is often used in mobile devices, automotive applications, and other embedded systems due to its robust performance and compact form factor. Understanding this component is crucial for engineers and developers involved in memory design and integration.

Features

The MT53E512M32D2NP-046 WT:E is a DRAM memory chip from Micron Technology. It is part of the DDR4 SDRAM family, featuring a capacity of 512 Megabits (64 Megabytes) and a 32-bit data width. The chip operates with a data rate of 1.6 GT/s (gigatransfers per second) and has a clock speed of 400 MHz.
Key features include:
- Low Power Consumption: Designed for energy-efficient applications, with a lower voltage operation (typically 1.2V).
- High Bandwidth: Suitable for data-intensive applications, offering improved performance over previous DDR generations.
- Reliability: Incorporates advanced error correction capabilities to enhance data integrity.
- Integration: Compatible with various memory controllers and systems, enabling easy integration into modern electronic devices.
This memory is commonly used in mobile devices, computers, and embedded systems, providing a balance of performance and power efficiency.

Package

The MT53E512M32D2NP-046 WT:E is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array). This type of packaging is designed for high-density applications, allowing for efficient thermal management and space-saving on circuit boards.

Pinout

The MT53E512M32D2NP-046 WT:E is a 512Mb (megabit) DDR3 SDRAM device organized as 512M x 32 bits, produced by Micron Technology. It features a 78-ball FBGA package, with a pitch of 0.8 mm.
Pin Count and Functions:
- Total Pins: 78
- Key Functions:
- Data Pins (DQ): Used for data input and output.
- Command Pins (CMD): Control the operation of the memory, including read, write, and refresh commands.
- Address Pins (A): Used to select memory locations.
- Clock Pins (CLK, CLK): Provide the timing reference for data transfers.
- Control Pins (CS, WE, RAS, CAS): Chip select, write enable, row address strobe, and column address strobe for memory control.
- Power and Ground Pins (VDD, VSS): Supply power and provide a reference ground.
For specific functions of each pin and their configurations, refer to the device’s datasheet.

Manufacturer

The MT53E512M32D2NP-046 WT:E is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a range of memory products, including DRAM, NAND flash memory, and other types of storage technologies used in various applications, from consumer electronics to enterprise solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation, research and development efforts, and commitment to sustainability in technology. It serves a diverse clientele, including manufacturers of computers, mobile devices, automotive systems, and more, making it a key player in the technology ecosystem.

Application

The MT53E512M32D2NP-046 WT:E is a DDR4 memory device commonly used in applications such as mobile devices, automotive systems, consumer electronics, and embedded systems. Its high density and performance make it suitable for tasks requiring fast data processing and storage, like gaming, multimedia applications, and industrial automation.

Equivalent

The MT53E512M32D2NP-046 WT:E chip is a DRAM memory component, specifically a DDR4 SDRAM with a 512Mb capacity and x32 data organization. Equivalent products may include other DDR4 chips with similar specifications, such as the Samsung K4A8G085WB-BCRC or Micron MT53E512M32D2NP-046. Always verify compatibility with your specific application regarding voltage, speed, and timings.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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