MT53E256M32D2DS-053 WT:B

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MT53E256M32D2DS-053 WT:B

8Gbit 1.1V 1.866GHz LPDDR4 SDRAM VFBGA-200 Memory (ICs) RoHS

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  • Mfr. Partie #MT53E256M32D2DS-053 WT:B
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  • Fiche de données
  • En stock24975

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Spécifications

Packaging VFBGA-200
Clock Frequency 1.866GHz
Memory Format LPDDR4 SDRAM
Memory Size 8Gbit
Operating temperature -30℃~+85℃
Voltage - Supply 1.1V

Vue d'ensemble

Description

The MT53E256M32D2DS-053 WT:B is a memory chip produced by Micron Technology. It is part of the DDR3 SDRAM family and features a 256 Meg x 32 configuration, indicating it has a capacity of 8 gigabits (1 gigabyte) per chip. This chip operates with a data bus width of 32 bits and is optimized for high-performance applications, such as computing and networking.
The "053" in its designation typically refers to the speed grade, indicating that it operates at a specific frequency, while "WT:B" denotes the package type and temperature grade. DDR3 memory is known for its improved bandwidth and lower power consumption compared to previous DDR generations. This makes it suitable for applications requiring efficient data processing and power management.
In summary, the MT53E256M32D2DS-053 WT:B is a high-performance, low-power DDR3 memory solution ideal for various electronic devices and systems that demand reliable and fast data handling capabilities.

Features

The MT53E256M32D2DS-053 WT:B is a DDR4 DRAM memory chip manufactured by Micron Technology. It features a density of 256 Megabytes, organized in a 32-bit wide configuration. Key specifications include:
1. Speed: Operates at a data rate of 2400 MT/s (million transfers per second).
2. Voltage: Typically operates at a low voltage of 1.2V, enhancing power efficiency.
3. Package Type: Comes in a compact package, suitable for various applications requiring space efficiency.
4. Latency: Designed for low latency, which improves overall system performance.
5. Applications: Commonly used in computing devices, networking applications, and embedded systems.
Overall, the MT53E256M32D2DS-053 WT:B is suitable for high-performance applications requiring reliable and efficient memory solutions.

Package

The MT53E256M32D2DS-053 WT:B is a DDR4 memory device packaged in a 96-ball FBGA (Fine Ball Grid Array) package. This type of packaging is designed for high-density memory applications, providing good thermal performance and efficient use of space on PCBs.

Pinout

The MT53E256M32D2DS-053 WT:B is a DDR3 SDRAM memory device with a pin count of 78 pins. This device is organized as 256 Meg x 32 bits and operates at a data rate of 1066 MT/s (megatransfers per second).
The main functions of this memory module include providing high-speed data storage and retrieval for various applications, such as computing and networking devices. It supports features like burst mode and has a prefetch capability to enhance performance. The device operates on a supply voltage of 1.5V and is designed for use in systems that require efficient power consumption and high data bandwidth.
For detailed specifications, including pin assignments and electrical characteristics, referring to the manufacturer's datasheet is recommended.

Manufacturer

The MT53E256M32D2DS-053 WT:B is manufactured by Micron Technology, Inc. Micron is a leading global producer of semiconductor devices, specializing in memory and storage solutions, including DRAM, NAND flash, and NOR flash. The company is known for its innovation in memory technology and is a key player in the semiconductor industry, providing products for various applications such as computing, mobile, automotive, and industrial sectors. Founded in 1978 and headquartered in Boise, Idaho, Micron operates multiple manufacturing facilities worldwide and is recognized for its commitment to quality and performance in memory solutions.

Application

The MT53E256M32D2DS-053 WT:B is a DRAM memory chip primarily used in applications such as mobile devices, tablets, and consumer electronics requiring high-performance memory. It's suitable for graphics processing, gaming systems, and networking equipment, where fast data access and efficiency are critical. Its low power consumption also makes it ideal for battery-operated devices.

Equivalent

The MT53E256M32D2DS-053 WT:B chip is a 2Gb DDR3 SDRAM memory chip. Equivalent products include similar DDR3 SDRAM chips from manufacturers such as Micron (MT53E256M32D2DS-053), Samsung (K4B4G1646D), and Hynix (HMT451S6CFR8A). Ensure to check specifications like speed, voltage, and package type for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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