MT47H64M16NF-25E:M

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MT47H64M16NF-25E:M

IC DRAM 1GBIT PARALLEL 84FBGA

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  • Mfr. Partie #MT47H64M16NF-25E:M
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Spécifications

Part Status Active
Base Product Number MT47H64M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Packaging Tray
Access Time 400 ps

Vue d'ensemble

Description

The MT47H64M16NF-25E is a DRAM (Dynamic Random Access Memory) chip manufactured by Micron Technology. It is a 64M x 16-bit DDR3 SDRAM, which means it has a capacity of 1 GB (64 megabits x 16 bits). This chip operates at a clock speed of 800 MHz (DDR3-1600), and it is designed for low power consumption, making it suitable for mobile and embedded applications.
Key features include a 1.5V core voltage, 8-byte wide data bus, and a standard 78-ball BGA (Ball Grid Array) package. The "25E" in the part number indicates a specific process technology, contributing to its performance characteristics. The chip supports various operations such as random access, burst mode, and various refresh cycles, ensuring reliable data storage and retrieval.
MT47H64M16NF-25E is widely used in consumer electronics, telecommunications, and computing devices where efficient memory solutions are essential.

Features

The MT47H64M16NF-25E is a high-performance DDR3 SDRAM memory chip manufactured by Micron Technology. Here are its key features:
1. Density: 1GB (64 Meg x 16-bit organization).
2. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
3. Voltage: Operates at a low voltage of 1.5V, promoting energy efficiency.
4. Architecture: Supports an 8-bit prefetch architecture, which enhances data transfer rates.
5. Package: Available in a JEDEC-standard 78-ball FBGA (Fine Ball Grid Array) package.
6. Latency: Offers various CAS latency options, typically CL11 or CL13.
7. Temperature Range: Supports industrial temperature ranges, suitable for various applications.
8. Applications: Commonly used in consumer electronics, computing devices, and embedded systems due to its reliability and performance.
These features make the MT47H64M16NF-25E suitable for applications requiring fast and efficient memory solutions.

Package

The MT47H64M16NF-25E:M is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for surface mounting and provides efficient thermal performance and space-saving benefits in electronic circuits.

Pinout

The MT47H64M16NF-25E:M is a 1Gb DDR3 SDRAM memory chip with a pin count of 78. This device is organized as 64 Meg x 16 bits and operates at a clock speed of 800 MT/s, with a memory bandwidth of up to 6.4 GB/s.
The primary functions of the chip include data storage, buffering, and quick access in computing applications. It features a standard DDR3 interface, allowing for high-speed data transfer and reduced power consumption compared to its predecessors. The chip supports various memory commands including read, write, and refresh operations while being optimized for use in both consumer electronics and industrial applications. The "25E" in the part number denotes the speed grade, indicating a maximum clock frequency of 800 MHz.
This device is typically used in applications such as laptops, desktops, and servers where high-density memory solutions are required.

Manufacturer

The manufacturer of the MT47H64M16NF-25E:M is Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a range of memory products including DRAM, NAND flash memory, and 3D XPoint technology. The company serves various markets such as computing, mobile devices, automotive, and Internet of Things (IoT) applications. Micron is known for its innovation in memory technology and plays a significant role in the global semiconductor industry.

Application

The MT47H64M16NF-25E:M is a DRAM memory chip used in various applications, including consumer electronics, automotive systems, networking equipment, and industrial control systems. Its high-density and reliability make it suitable for devices requiring efficient data storage and processing, such as smartphones, tablets, laptops, and embedded systems.

Equivalent

The MT47H64M16NF-25E:M chip, a DDR3 SDRAM memory module, has equivalent products from other manufacturers, including:
1. Hynix H5TQ2G83EFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA
Always verify specifications and compatibility for your specific application before use.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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