MT47H64M16HR-25E:H

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MT47H64M16HR-25E:H

IC DRAM 1GBIT PARALLEL 84FBGA

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  • Mfr. Partie #MT47H64M16HR-25E:H
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  • En stock4867

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Spécifications

Part Status Obsolete
Base Product Number MT47H64M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Packaging Tray
Access Time 400 ps

Vue d'ensemble

Description

The MT47H64M16HR-25E is a DRAM (Dynamic Random Access Memory) chip manufactured by Micron Technology. It is a 1GB DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) organized as 64 Meg x 16 bits. Designed for high-performance applications, this memory module operates at a data rate of 800 MT/s (mega-transfers per second) with a supply voltage of 1.5V.
The "25E" in the part number indicates specific speed and timing characteristics, along with the temperature range suitable for operation. This chip is commonly used in various devices like laptops, desktops, and servers, providing efficient performance for data-intensive applications. Its design allows for low power consumption while maintaining high throughput and reliability, making it ideal for modern computing needs. The MT47H64M16HR-25E is part of Micron's larger family of memory solutions, which are known for their quality and innovation in memory technology.

Features

The MT47H64M16HR-25E is a DRAM memory chip from Micron Technology. It features:
1. Type: DDR3 SDRAM (Synchronous Dynamic Random-Access Memory)
2. Density: 1GB (64 Meg x 16 bits)
3. Organization: 8 banks, 4K row address, and 16 column address.
4. Speed: Operates at 800 MT/s (megatransfers per second) with a 25 ns cycle time.
5. Voltage: 1.5V (standard DDR3 voltage).
6. Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array).
7. Features: Supports burst lengths of 4 or 8, self-refresh, and low-power modes.
The MT47H64M16HR-25E is suitable for various applications including laptops, desktops, and embedded systems, providing high performance and efficient power use.

Package

The MT47H64M16HR-25E:H is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of packaging is designed for high-density applications, allowing for efficient space utilization on PCBs and improved thermal performance.

Pinout

The MT47H64M16HR-25E:H is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 64 Meg x 16 bits and operates with a supply voltage of 1.5V.
Key functions include:
- Data storage for high-performance applications.
- Support for high-speed operation with a maximum clock frequency of 800 MHz.
- Built-in functions for data integrity, such as ECC (Error Correction Code).
- Support for various data rates and burst lengths, enhancing flexibility in data management.
This memory device is commonly used in computing and networking applications where high bandwidth and low latency are required.

Manufacturer

The manufacturer of the MT47H64M16HR-25E:H is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM (Dynamic Random-Access Memory), NAND flash memory, and storage technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a wide array of products for various applications, including computing, mobile devices, automotive, and enterprise systems. The company is known for its innovation in semiconductor technology and plays a significant role in advancing memory solutions in the industry.

Application

The MT47H64M16HR-25E:H is a DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, telecommunications, networking equipment, and industrial systems. Its high-density and high-speed capabilities make it suitable for laptops, desktops, servers, and embedded systems that require efficient data processing and storage.

Equivalent

The MT47H64M16HR-25E:H is a DDR3 SDRAM chip. Equivalent products include the Hynix H57Q4G63CFR, Samsung K4B4G1646F, and Micron MT41J128M16HA. Ensure compatibility by checking specifications such as speed, package type, and voltage.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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