MT47H256M8EB-25EIT:C

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MT47H256M8EB-25EIT:C

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  • Mfr. Partie #MT47H256M8EB-25EIT:C
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Spécifications

Manufacturer Micron Tech
Package FBGA-60
Voltage - Supply 1.7V~1.9V
Operating Temperature -40℃~+95℃
Memory Format SDRAM DDR2

Vue d'ensemble

Description

The MT47H256M8EB-25EIT:C is a specific model of DRAM (Dynamic Random Access Memory) manufactured by Micron Technology. It is part of the DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic RAM) family, which is designed to provide high-speed data transfer rates for computing applications. This particular model features a density of 2 Gb, organized as 256M x 8 bits. It operates with a clock speed of 400 MHz, which effectively provides a data rate of 800 MT/s (megatransfers per second), thanks to the DDR (double data rate) technology. The "25E" in its designation indicates a cycle time of 2.5 ns, and the "IT" refers to the industrial temperature range it supports, which is typically between -40°C to 85°C. The "C" at the end signifies a specific revision or configuration code used by the manufacturer. This memory component is commonly used in applications that require reliable performance under extreme temperatures, such as industrial computing, telecommunications, and networking equipment.

Features

The MT47H256M8EB-25EIT:C is a DRAM module produced by Micron Technology. It features a 2Gb density organized as 256Mx8, using DDR2 SDRAM technology. This module operates at a clock speed of 400 MHz, delivering a data rate of 800 MT/s (megatransfers per second). It is designed for high-speed data transfer and efficient power usage.
Key features include a CAS latency of 5, a voltage supply of 1.8V, and it operates in a temperature range suitable for industrial applications (-40°C to +85°C). The module utilizes a ball grid array (BGA) package for robust and compact connections, supporting improved thermal performance and reliability.
The MT47H256M8EB-25EIT:C is optimized for applications requiring reliable and efficient memory solutions, such as telecommunications, networking equipment, and industrial electronics. It supports industry-standard DDR2 interfaces and includes features like programmable read and write latencies, on-die termination, and power-saving modes.

Package

The MT47H256M8EB-25EIT:C is a DRAM chip in a TSOP (Thin Small Outline Package), which is a type of surface-mount packaging commonly used for integrated circuits.

Pinout

The MT47H256M8EB-25E IT:C is a DRAM chip from the DDR2 family by Micron Technology. It is organized as 256 Meg x 8 bits, which indicates it functions with 8 data pins. The key specifications for this chip include:
1. Pin Count: The chip typically comes in a 60-ball FBGA (Fine-Pitch Ball Grid Array) package.

2. Functions:
- Data Pins (DQ): 8 data pins for transferring data.
- Address Pins (A): Used for specifying the row and column addresses.
- Control Pins: These include pins like WE# (Write Enable), CAS# (Column Address Strobe), RAS# (Row Address Strobe), CS# (Chip Select), and others for controlling the read/write operations.
- Clock and Strobe Pins: CK, CK# for clock signals, and DQS for data strobe.
- Power Pins: VDD and VSS for power and ground connections.
These descriptions offer a high-level overview of the MT47H256M8EB-25E IT:C functions and capabilities. For detailed pin descriptions and electrical specifications, referring to the manufacturer's datasheet is recommended.

Manufacturer

The MT47H256M8EB-25EIT:C is manufactured by Micron Technology, Inc. Micron is a leading American company that specializes in the production of memory and storage solutions. It is known for manufacturing DRAM, NAND flash, and other semiconductor devices that are integral to a wide range of computing and electronic applications. Micron's products are used in various industries, including computing, mobile devices, automotive, data centers, and industrial sectors. The company is recognized for its innovation in memory technology and plays a significant role in advancing the capabilities of modern digital systems.

Application

The MT47H256M8EB-25EIT:C is a DDR2 SDRAM component commonly used in applications requiring fast data access and high memory bandwidth. These include computing devices such as desktops, laptops, and servers, as well as telecommunications equipment, networking devices, and consumer electronics like gaming consoles and digital cameras. It is suited for environments where efficient processing and quick data retrieval are critical.

Equivalent

The MT47H256M8EB-25EIT:C is a 2Gb DDR2 SDRAM from Micron. Equivalent products are DDR2 SDRAMs with similar specifications such as 2Gb density, an 8-bit data width, and compatible speed and voltage ratings. Look for equivalents from manufacturers like Samsung (e.g., K4T1G164QE), Hynix (e.g., H5TQ2G63GFR), and Nanya (e.g., NT5TU64M8GE) that match these specifications. Always verify compatibility with the specific requirements of your application or system.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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