MT41K512M8RH-125:E

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MT41K512M8RH-125:E

IC DRAM 4GBIT PARALLEL 78FBGA

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  • Mfr. Partie #MT41K512M8RH-125:E
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  • En stock4518

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Spécifications

Part Status Obsolete
Base Product Number MT41K512M8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (9x10.5)
Packaging Tray
Access Time 13.75 ns

Vue d'ensemble

Description

The MT41K512M8RH-125:E is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a 4 Gb (512 MB x 8) capacity, operates at a speed of 1600 MT/s, and is packaged in a 96-ball FBGA (Fine Pitch Ball Grid Array) format. This memory module is designed for high-performance applications, offering low latency and efficient power consumption (1.5V operating voltage).
Key attributes include a 64-bit data width, providing substantial bandwidth for data-intensive tasks, and support for various functionalities such as burst lengths of 8 and 4. The "125" designation indicates a maximum clock speed of 1250 MHz, while the ":E" suffix signifies that it is RoHS compliant, meaning it is free from hazardous substances.
The MT41K512M8RH-125:E is commonly used in laptops, desktops, servers, and embedded systems, making it suitable for both consumer and industrial applications. Its reliability and performance make it a popular choice for designers seeking robust memory solutions.

Features

The MT41K512M8RH-125:E is a 4Gb (512MB) DDR3 SDRAM memory chip from Micron Technology. It features an 8-bit data width and is organized as 512M x 8, making it suitable for various applications requiring high-density memory solutions. Key specifications include:
- Speed Grade: Operates at DDR3-1600 (PC3-12800) with a maximum data transfer rate of 1600 MT/s.
- Voltage: Operates at a supply voltage of 1.5V.
- Package Type: Offered in a 78-ball FBGA (Fine Ball Grid Array) package.
- Temperature Range: Supports an industrial temperature range of -40°C to +95°C.
- Features: Supports various functionalities like burst modes, and has built-in features for enhanced performance, reliability, and power efficiency.
- Interface: Compliant with the DDR3 SDRAM standard, allowing for integration into a range of devices, including PCs, servers, and embedded systems.
This chip is ideal for applications demanding low power consumption with high performance.

Package

The MT41K512M8RH-125:E is packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type is designed for compact, high-density applications, allowing efficient placement on circuit boards.

Pinout

The MT41K512M8RH-125:E is a DRAM memory module from Micron's DDR3 SDRAM series. It has a total pin count of 78.
The primary functions of its pins include:
1. Data Bus (DQ): 8 bi-directional data pins for data transfer.
2. Address Pins (A0-A13): Used for selecting memory locations.
3. Control Pins: Includes Chip Select (CS), Write Enable (WE), and Read Enable (RE) for controlling read and write operations.
4. Clock Signals (CK, CK#): Provide timing signals for synchronization.
5. Power and Ground Pins (VDD, VSS): Supply power and ground connections.
6. Burst Control Signals (BA0, BA1): Select the bank address for operations.
7. Other Control Signals: Such as Reset and Mode Register Set (MRS).
This configuration allows for efficient memory operations in various applications, including computing and mobile devices.

Manufacturer

The manufacturer of the MT41K512M8RH-125:E is Micron Technology, Inc. Micron is an American global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a variety of products including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves a wide range of markets, including computing, consumer electronics, mobile devices, and automotive applications. Micron is known for its innovation in memory technology and plays a significant role in the development of next-generation memory solutions, contributing to advancements in data storage and processing efficiency across various industries.

Application

The MT41K512M8RH-125:E is a DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, laptops, desktops, servers, networking equipment, and embedded systems. Its high-density and performance make it suitable for applications requiring fast data processing and large memory capacities, including gaming, multimedia devices, and cloud computing.

Equivalent

The MT41K512M8RH-125:E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR - DDR3 4Gb
2. Samsung K4B4G1646E - DDR3 4Gb
3. Micron MT41K512M16HA - DDR3 4Gb
Ensure compatibility with your specific application requirements, as there may be variations in speed, voltage, and package type.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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