MT41K512M16TNA-107:E

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MT41K512M16TNA-107:E

IC DRAM 8GBIT PARALLEL 96FBGA

  • Fabricant
  • Mfr. Partie #MT41K512M16TNA-107:E
  • Paquet 96-TFBGA
  • Fiche de données
  • En stock5654

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Spécifications

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR3L
MemorySize 8Gb (512M x 16)
MemoryInterface Parallel
ClockFrequency 933 MHz
AccessTime 20 ns
Voltage-Supply 1.283V ~ 1.45V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-TFBGA

Vue d'ensemble

Description

The MT41K512M16TNA-107:E is a DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology. It features a 4GB (512MB x 16) memory configuration with a 288-pin DIMM form factor, making it suitable for various applications including desktops and laptops.
Key specifications include a data transfer rate of up to 2400 MT/s (million transfers per second) and a low voltage operating range of 1.2V, which enhances energy efficiency. The ‘107’ designator indicates specific performance parameters and timing characteristics, while the ‘E’ suffix signifies compliance with the DDR4 standard.
This memory chip offers improved speed and bandwidth over previous generations, making it ideal for demanding computing tasks such as gaming, data processing, and multitasking. Its compatibility with a wide range of chipsets and motherboards makes it a versatile choice for system builders and upgraders looking to enhance overall system performance.

Features

The MT41K512M16TNA-107:E is a DDR3 DRAM memory device manufactured by Micron Technology. Key features include:
1. Capacity: 512 Megabits (64 Megabytes) per chip.
2. Organization: Configured as x16, meaning it has a 16-bit data width.
3. Speed: Operates at a data rate of 1066 MT/s (megatransfers per second).
4. Voltage: Utilizes a standard operating voltage of 1.5V.
5. Package: Available in a small FBGA (Fine Ball Grid Array) package for efficient space utilization.
6. Temperature Range: Rated for operation in a commercial temperature range (0°C to 85°C).
7. ECC: Supports error-correcting code (ECC) functionality for improved reliability.
8. Compatibility: Designed for compatibility with a variety of DDR3 applications, including computers and embedded systems.
This memory chip is suitable for applications requiring moderate speed and density, providing an efficient solution for enhancing system performance.

Package

The MT41K512M16TNA-107:E is a DDR3 SDRAM memory chip packaged in a standard 78-ball FBGA (Fine Ball Grid Array) package. This type of packaging provides efficient thermal performance and space-saving design for integrated circuits.

Pinout

The MT41K512M16TNA-107:E is a DDR3 SDRAM memory chip with a pin count of 78. It is designed for use in various electronic applications, providing high-speed data transfer and efficient performance.
The key functions of this memory chip include:
1. Data Storage: It serves as volatile memory, temporarily storing data for quick access by the CPU.
2. High-Speed Performance: Supports DDR3 interface with a data rate of up to 1600 MT/s, enhancing system performance.
3. Low Power Consumption: Operates at a lower voltage (1.35V), which helps in reducing power usage compared to older DDR generations.
4. Memory Organization: It is organized as 512 Meg x 16 bits, allowing for substantial data handling.
This chip is commonly used in applications such as computers, servers, and various embedded systems.

Manufacturer

The manufacturer of the MT41K512M16TNA-107:E is Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs), serving various markets such as computing, mobile, automotive, and industrial sectors. Micron is known for its innovation in memory technology and plays a significant role in the global semiconductor industry.

Application

The MT41K512M16TNA-107:E is a DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, laptops, desktop computers, networking equipment, and embedded systems. Its features make it suitable for high-performance computing tasks, graphics processing, and server memory applications, where reliable and efficient data storage is essential.

Equivalent

The MT41K512M16TNA-107:E chip is a DDR3 SDRAM memory chip. Equivalent products include the Hynix H5TQ4G63AFR, Micron MT41K512M16HA, and Samsung K4B4G1646D. Ensure compatibility with your specific application in terms of speed, voltage, and configuration. Always check datasheets for precise specifications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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2. Carte de crédit/débit

3. Transfert bancaire

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