MT41K256M16TW-125:P

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MT41K256M16TW-125:P

IC DRAM 4GBIT PARALLEL 96FBGA

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  • Mfr. Partie #MT41K256M16TW-125:P
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Spécifications

Part Status Obsolete
Base Product Number MT41K256M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (8x14)
Packaging Tray
Access Time 20 ns

Vue d'ensemble

Description

The MT41K256M16TW-125:P is a DRAM memory chip produced by Micron Technology. It belongs to the DDR3 SDRAM family, specifically a 2Gb (gigabit) component organized as 256M x 16 bits. The "125" in the part number indicates a maximum clock speed of 1250 MHz, while the "P" signifies that it is a Pb-free (lead-free) package, compliant with environmental regulations.
Key features include low power consumption, making it suitable for mobile and high-performance computing applications. The chip operates at a voltage of 1.5V, offering improved energy efficiency compared to older DRAM technologies. The MT41K256M16TW-125:P is commonly used in various devices, including laptops, desktops, and servers, providing reliable and high-speed memory performance for demanding applications. Its compact design and adherence to industry standards allow for easy integration into various electronic systems.

Features

The MT41K256M16TW-125:P is a DDR3 SDRAM memory chip produced by Micron Technology. It features a 2Gb (256M x 16) capacity, organized in a 16-bit wide configuration. Key specifications include a data rate of 1600 MT/s, a supply voltage of 1.5V, and an I/O voltage of 1.5V as well. The device supports a CAS latency of CL11 and operates with a maximum transfer bandwidth of 12.8 GB/s.
This memory chip utilizes a 78-ball FBGA package and is designed for use in various applications, including desktops, laptops, and servers. It includes built-in self-test (BIST) capabilities for improved reliability and performance. The MT41K256M16TW-125:P also features advanced power-saving modes, enhancing energy efficiency. It is RoHS compliant and suitable for high-performance computing environments, making it a reliable choice for modern memory solutions.

Package

The MT41K256M16TW-125:P is packaged in a 78-ball FBGA (Fine Ball Grid Array) configuration.

Pinout

The MT41K256M16TW-125:P is a DDR3 SDRAM memory chip with a total pin count of 78. This chip features a 2Gb (256M x 16) density and operates at a data rate of 1600 MT/s.
Key functions of the pins include:
- Data Pins (DQ): 16 data pins for read/write operations.
- Address Pins (A): Used to select memory locations.
- Control Pins: Includes signals like Chip Select (CS), Write Enable (WE), and Read Enable (RE) for controlling memory operations.
- Clock Pins (CK, CK#): Differential clock inputs for timing.
- Power Supply Pins: Supply voltage (VDD) and ground (VSS).
- Mode Register Set (MRS) Pins: For configuring the memory's operational parameters.
The chip supports various features such as on-die termination (ODT) and is compliant with the DDR3 SDRAM standard, making it suitable for a wide range of applications in consumer electronics and computing devices.

Manufacturer

The manufacturer of the MT41K256M16TW-125:P is Micron Technology, Inc. Micron is an American company that specializes in semiconductor manufacturing, particularly in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various sectors, such as computing, mobile devices, automotive, and enterprise applications. Micron is known for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The MT41K256M16TW-125:P is a 4GB DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, desktop computers, laptops, networking devices, and industrial equipment. Its high-speed performance and capacity make it suitable for gaming systems, servers, and embedded systems that require efficient data processing and storage.

Equivalent

The MT41K256M16TW-125:P chip is a 4Gb DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ4G83CFR-PBA
2. Samsung K4B4G1646F-BCK0
3. Micron MT41K256M16HA-125
4. Nanya NT5CB256M16DP-DI
Always verify compatibility and specifications before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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