MT41K256M16LY-107:N

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MT41K256M16LY-107:N

IC DRAM 4GBIT PAR 96FBGA

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  • Mfr. Partie #MT41K256M16LY-107:N
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Spécifications

Part Status Obsolete
Base Product Number MT41K256M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 933 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13.5)
Packaging Tray
Access Time 20 ns

Vue d'ensemble

Description

The MT41K256M16LY-107:N is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip manufactured by Micron Technology. It features a configuration of 256 Meg x 16 bits, resulting in a total capacity of 4 gigabits. This memory chip operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s (megatransfers per second), making it suitable for a variety of applications that require efficient and high-speed memory performance.
The "107" in the part number indicates the speed grade, while the "N" denotes that it is a lead-free, RoHS-compliant package, emphasizing environmental considerations. The MT41K256M16LY-107:N is typically used in applications such as computers, servers, and other electronic devices that demand reliable and fast memory solutions. Its features include low power consumption, high bandwidth, and improved performance over previous DDR generations, making it a popular choice in modern memory system designs.

Features

The MT41K256M16LY-107:N is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) module manufactured by Micron Technology. Here are its key features:
1. Density: 4Gb (Gigabits) per chip, organized as 256Mx16.
2. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
3. Speed Grade: Operates at 1066 MT/s (megatransfers per second).
4. Voltage: Requires a supply voltage of 1.5V, with a low power consumption.
5. Data Rate: Supports a data rate of up to 8.5GB/s.
6. Timing Parameters: Features CAS latency options, typically CL7, CL8, or CL9.
7. Temperature Range: Commercial temperature range from 0°C to 95°C.
8. Compatibility: Designed for applications like consumer electronics, networking, and computing.
This memory module is suitable for high-performance applications requiring reliable data storage and access speed.

Package

The MT41K256M16LY-107:N is packaged in a 78-ball, 8x8mm, TFBGA (Thin Fine Ball Grid Array) configuration. This type of packaging is commonly used for memory devices, providing a compact design and efficient thermal performance.

Pinout

The MT41K256M16LY-107:N is a DDR3 SDRAM memory chip with a pin count of 78 pins. It is organized as 256 Meg x 16 bits and operates at a maximum clock frequency of 1066 MT/s.
The primary functions of this chip include data storage and retrieval, featuring a double data rate interface, which allows it to transfer data on both the rising and falling edges of the clock signal. It supports various memory operations such as read, write, and refresh cycles, making it suitable for applications in computers, servers, and other electronic devices that require high-speed memory. Additionally, it incorporates features like variable burst lengths and on-die termination for improved signal integrity.

Manufacturer

The manufacturer of the MT41K256M16LY-107:N is Micron Technology, Inc. Micron is an American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for producing DRAM, NAND flash memory, and other related products used in computing devices, mobile devices, and data storage. The company serves a variety of industries, including consumer electronics, automotive, and enterprise storage, and is recognized as one of the leading players in the global semiconductor market.

Application

The MT41K256M16LY-107:N is a DDR3 SDRAM memory chip primarily used in applications like consumer electronics, laptops, desktops, networking equipment, and servers. Its high-density and low-power features make it suitable for mobile devices and embedded systems, enhancing performance in tasks such as gaming, multimedia processing, and data-intensive applications.

Equivalent

The MT41K256M16LY-107:N chip, a DDR3 SDRAM, has several equivalent products, including:
1. Hynix H5TQ2G83EFR-PBC
2. Samsung K4B4G1646D-BCK0
3. Micron MT41K256M16HA-125
4. Nanya NT5CC256M16DP-DI
Ensure compatibility with your specific application before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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