MT41K256M16HA-125:E

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MT41K256M16HA-125:E

IC DRAM 4GBIT PARALLEL 96FBGA

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  • Mfr. Partie #MT41K256M16HA-125:E
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  • En stock4738

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Spécifications

Part Status Obsolete
Base Product Number MT41K256M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x14)
Packaging Tray
Access Time 13.75 ns

Vue d'ensemble

Description

The MT41K256M16HA-125:E is a DRAM memory chip produced by Micron Technology. It is a 2Gb DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) device organized as 256M x 16 bits. The “125” in the part number indicates a maximum data rate of 1600 MT/s (Mega Transfers per second), while the “E” signifies that it is compliant with the RoHS (Restriction of Hazardous Substances) standards. This memory chip is commonly used in various applications, including computers, servers, and other electronic devices requiring high-performance memory. Its low power consumption and high-speed performance make it suitable for modern computing needs. Key features include a single supply voltage of 1.5V, burst lengths of 4 and 8, and support for various operating modes. The MT41K256M16HA-125:E is ideal for applications that demand reliable and efficient memory solutions.

Features

The MT41K256M16HA-125:E is a 4Gb DDR3 SDRAM memory chip designed by Micron Technology. Key features include:
1. Density: 4 Gigabits (512 Megabytes).
2. Organization: It has a data width of 16 bits and is organized in 256 Meg x 16 format.
3. Speed: Operates at a data rate of 1600 MT/s.
4. Voltage: Operates at a low voltage of 1.35V (with a maximum of 1.575V).
5. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
6. Functionality: Support for various modes including burst lengths of 8 and 4; supports both normal and low power modes.
7. ECC: Error Correction Code (ECC) support for enhanced reliability.
8. Applications: Suitable for consumer electronics, networking, and mobile applications.
This chip is designed for high performance and efficiency, making it a suitable choice for a variety of computing applications.

Package

The MT41K256M16HA-125:E is a DDR3 SDRAM memory chip packaged in a standard 78-ball BGA (Ball Grid Array) form factor. This package type is designed for high-density applications, providing efficient space utilization and thermal performance.

Pinout

The MT41K256M16HA-125:E is a DDR3 SDRAM memory chip from Micron Technology. It features a pin count of 78 pins in a TFBGA (Thin Fine Ball Grid Array) package.
The primary functions of this memory chip include:
1. Data Storage: It provides 256 megabits of memory capacity organized as 16 megabytes x 16 bits.
2. Memory Access: Supports high-speed data transfer rates, optimized for applications requiring fast read/write operations.
3. Voltage Supply: Operates at a core voltage of 1.5V, ensuring compatibility with many modern systems.
4. Burst Mode: Designed for burst read and write operations, enhancing performance in high-performance computing environments.
5. Temperature Range: Suitable for commercial applications, usually rated for operation between 0°C to +95°C.
This chip is commonly used in various electronic devices such as computers, servers, and mobile devices.

Manufacturer

The manufacturer of the MT41K256M16HA-125:E is Micron Technology, Inc. Founded in 1978 and headquartered in Boise, Idaho, Micron is a leading global provider of innovative memory and storage solutions. The company specializes in designing and manufacturing DRAM, NAND flash memory, and other semiconductor products. Micron serves a wide range of markets, including computing, mobile, consumer electronics, and automotive, providing essential components for various applications such as data centers, smartphones, and personal computers. Micron is recognized for its commitment to research and development, advancing memory technology to meet the growing demands for data processing and storage across different industries.

Application

The MT41K256M16HA-125:E is a DRAM memory module commonly used in applications like consumer electronics, networking equipment, telecommunications, and industrial automation. It is suitable for devices requiring high-density memory solutions, including laptops, servers, and embedded systems, due to its low power consumption and high performance.

Equivalent

The MT41K256M16HA-125:E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ4G83EFR-PBA
2. Samsung K4B4G1646E-HYK0
3. Micron MT41K256M16HA-125
4. Nanya NT5CC256M16ER-15
Ensure compatibility in terms of specifications, speed, and timing when selecting alternatives. Always verify with datasheets for specific application requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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