MT40A512M8RH-083E:B

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MT40A512M8RH-083E:B

IC DRAM 4GBIT PAR 1.2GHZ 78FBGA

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  • Mfr. Partie #MT40A512M8RH-083E:B
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  • En stock2299

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Spécifications

Part Status Obsolete
Base Product Number MT40A512M8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 1.2 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (9x10.5)
Packaging Tray

Vue d'ensemble

Description

The MT40A512M8RH-083E:B is a DRAM (Dynamic Random Access Memory) module produced by Micron Technology. It is a DDR4 SDRAM component that offers a storage capacity of 4GB, organized in a 512M x 8 configuration. This memory chip operates at a data rate of 2133 MT/s (million transfers per second) and is designed for high-performance computing applications.
Key features include a 1.2V supply voltage, which helps reduce power consumption, and support for advanced memory features such as on-die ECC (Error-Correcting Code) for enhanced reliability. The chip is typically used in a variety of applications, including laptops, desktops, and servers, making it suitable for both consumer and enterprise-level systems.
The “B” in the part number generally indicates a revision or variation in specifications, such as temperature range or packaging type. Overall, the MT40A512M8RH-083E:B is designed to meet the demanding needs of modern computing environments, offering speed, efficiency, and reliability.

Features

The MT40A512M8RH-083E:B is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a 4GB capacity and is organized as 512MB x 8 bits (or 4 Megabytes x 8 bits). Key specifications include:
- Speed Grade: 1333 MT/s (Mega-transfers per second), with a specified data rate of up to 1066 MHz.
- Voltage: Operates at a low voltage of 1.5V, making it energy efficient.
- Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating easier integration into various applications.
- Temperature Range: Industrial temperature range is available, making it suitable for harsh environments.
- Applications: Commonly used in laptops, desktops, servers, and other computing devices requiring high-speed memory.
Overall, the MT40A512M8RH-083E:B is designed for reliable performance in demanding applications, providing a balance of speed and efficiency.

Package

The MT40A512M8RH-083E:B is a DDR4 SDRAM memory chip packaged in a 78-ball FBGAs (Fine Pitch Ball Grid Array) form factor. This package type is designed for high-density and efficient thermal management in various electronic applications.

Pinout

The MT40A512M8RH-083E:B is a DDR3 SDRAM memory chip with a total pin count of 78. It features a x8 data width, and its primary function is to provide high-speed memory storage for various applications, such as computers and embedded systems.
The chip operates with a supply voltage of 1.5V, supports data rates up to 1600 MT/s, and is organized as 512 Meg x 8 bits for a total capacity of 4 Gb. The device is designed for high performance and efficiency, ensuring low power consumption during operation.
Key functions of the pins include data input/output, address input, control signals (such as chip select, clock, and write/read operations), and power/ground connections. This makes it versatile for integration in memory-intensive applications.

Manufacturer

The manufacturer of the MT40A512M8RH-083E:B is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves various sectors, including consumer electronics, automotive, and data centers, among others. The company is known for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The MT40A512M8RH-083E:B is a high-density DDR3 SDRAM memory chip commonly used in applications such as servers, networking equipment, high-performance computing, and enterprise storage solutions. Its features enable efficient data processing, increased bandwidth, and enhanced performance in memory-intensive tasks, making it suitable for data centers, cloud computing, and industrial applications.

Equivalent

The MT40A512M8RH-083E:B chip is a DDR3 SDRAM memory module. Equivalent products include:
1. Hynix HYMD5G7AFR8C-AB
2. Samsung K4B4G1646F-BCK0
3. Micron MT41K256M8HA-125
4. Nanya NT5CB256M8FN-DI
Ensure compatibility with pin configuration, speed, and voltage before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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