MT40A512M16LY-062E AT:E

The MT40A512M16LY-062E is a DRAM memory chip manufactured by Micron Technology. It is a 512 Megabit (Mb) DDR4 SDRAM device, organized as 16 bits x 32 megabits. This chip operates at a frequency of 1600 MHz, effectively providing data rates of up to 3200 MT/s (megatransfers per second). It is built using a 6-layer design and follows the DDR4 specification, which offers improvements in speed, density, and power efficiency compared to previous generations like DDR3.
This specific model is designed for use in various applications, including personal computers, servers, and other electronic devices that require high-performance memory. The "LY" designation indicates that it is a low-voltage part, operating at 1.2V, which contributes to lower power consumption. The "062E" suffix typically refers to the part's packaging or version.
In summary, the MT40A512M16LY-062E is a high-speed, energy-efficient DDR4 memory solution suitable for modern electronics.

The MT40A512M16LY-062E AT is a high-performance DDR4 SDRAM memory chip designed for use in various computing applications. Here are its key features:
1. Density: 8 GB (512 Meg x 16 Configuration).
2. Speed: Operates at a data rate of 2400 MT/s (megatransfers per second).
3. Voltage: Typically operates at 1.2V, enabling power efficiency.
4. Package: Available in a compact 78-ball FBGA package.
5. Latency: Offers low latency, enhancing performance for memory-intensive applications.
6. Rank: Dual-rank configuration supports advanced memory operations.
7. Architecture: Utilizes a 16-bit wide data bus, suitable for various systems.
8. On-die ECC: Provides error correction capabilities to improve reliability.
9. Compatibility: Supports various DDR4 standards, ensuring compatibility with modern motherboards.
10. Temperature Range: Designed for standard operating temperatures, suitable for commercial applications.
These features make it suitable for use in laptops, desktops, and servers requiring efficient and high-speed memory solutions.

The MT40A512M16LY-062E AT:E is typically packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) format. This package type is designed for compact sizes and efficient thermal performance in various applications.

The MT40A512M16LY-062E AT:E is a DRAM memory chip with a pin count of 78. It is a DDR3 SDRAM device, specifically a 4Gb (512M x 16-bit) memory module. The key functions of this chip include data storage and retrieval at high speeds, making it suitable for various applications in computing and electronics. It operates at a memory clock speed of 800 MT/s (megatransfers per second) and has a supply voltage of 1.5V. The device is typically used in mobile and portable applications due to its power efficiency and performance characteristics.

The manufacturer of the MT40A512M16LY-062E AT:E is Micron Technology, Inc. Micron is an American global leader in the semiconductor industry, specializing in the production of memory and storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile devices, automotive, and data centers. The company is known for its innovation in memory technology and its commitment to advancing storage solutions that meet the demands of modern computing applications.

The MT40A512M16LY-062E AT is a 512Mb DDR3 SDRAM memory chip, typically used in various applications such as mobile devices, tablets, laptops, networking equipment, and other consumer electronics. It supports high-speed data transfer and is suitable for applications requiring efficient memory performance, like gaming, data processing, and multimedia applications.

The MT40A512M16LY-062E AT:E chip is a DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ2G63AFR
2. Samsung K4B4G1646F
3. Micron MT41K512M16HA-125
4. Nanya NT5CB256M16D1
Ensure to check specifications such as speed, voltage, and pin configuration for compatibility.