MT40A512M16HA-083E:A

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MT40A512M16HA-083E:A

IC DRAM 8GBIT PAR 1.2GHZ 96FBGA

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  • Mfr. Partie #MT40A512M16HA-083E:A
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Spécifications

Part Status Obsolete
Base Product Number MT40A512M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 8Gbit
Memory Organization 512M x 16
Memory Interface Parallel
Clock Frequency 1.2 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x14)
Packaging Tray

Vue d'ensemble

Description

The MT40A512M16HA-083E:A is a DRAM (Dynamic Random Access Memory) chip produced by Micron Technology. Specifically, it is a DDR4 (Double Data Rate 4) memory module with a capacity of 8GB (512 Meg x 16 bits). It operates at a standard voltage of 1.2V and features a data transfer rate of up to 2400 MT/s (million transfers per second), making it suitable for a wide range of applications, including desktops, laptops, and servers.
The chip is designed for high performance and efficiency, integrating advanced technology to minimize power consumption while maximizing speed and reliability. It comes in a standard 78-ball FBGA (Fine Ball Grid Array) package, facilitating ease of integration onto PCBs (Printed Circuit Boards). The part number indicates specific characteristics, such as organization, speed grade, and temperature range, which help in compatibility with various devices. Overall, the MT40A512M16HA-083E:A is a versatile choice for upgrading memory in compatible systems.

Features

The MT40A512M16HA-083E:A is a 512 Megabit (Mb) DDR3 SDRAM memory chip from Micron Technology. It features:
1. Density: 512 Mb (64MB) organization - 32 bits wide.
2. Data Rate: Supports DDR3 data rates up to 1600 MT/s (megatransfers per second).
3. Voltage: Operates at a supply voltage of 1.5V, with low power options available.
4. Package: Available in a compact 78-ball TFBGA (Thin Fine Ball Grid Array) package.
5. Temperature Range: Supports industrial and commercial temperature ranges.
6. Architecture: Utilizes a 16-bit I/O interface, making it suitable for various applications.
7. Features: Includes features like write leveling, on-die termination (ODT), and extended temperature options for reliability in diverse environments.
This chip is suitable for use in applications such as consumer electronics, networking devices, and embedded systems, where high performance and efficiency are required.

Package

The MT40A512M16HA-083E:A is a DDR3 SDRAM memory chip, typically packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This packaging is designed for efficient thermal management and space-saving on circuit boards.

Pinout

The MT40A512M16HA-083E:A is a DDR3 SDRAM memory component with a pin count of 78. This device is organized as 512 Meg x 16 bits, and it operates at a data rate of 1066 MT/s (Mega Transfers per second).
Key functions of the pins include:
- Data Pins (DQ0-DQ15): Used for data input and output.
- Address Pins (A0-A13): For selecting memory locations.
- Command Pins (BA0, BA1, RAS, CAS, WE): To control read/write operations and memory access.
- Clock Pin (CK, CK#): Provides timing for synchronous operation.
- Chip Select (CS#): Enables or disables the chip for operation.
- Power and Ground Pins (VDD, VSS): Provide power supply and ground reference.
This memory device is typically used in applications requiring high-speed data processing and storage.

Manufacturer

The MT40A512M16HA-083E:A is manufactured by Micron Technology, Inc. Micron is a prominent American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for producing a wide range of products, including DRAM, NAND flash memory, and various memory modules for applications in computing, mobile devices, automotive, and industrial sectors. The company plays a crucial role in the global semiconductor industry and is recognized for its innovations in memory technology.

Application

The MT40A512M16HA-083E:A is a DDR3 SDRAM memory chip primarily used in applications such as mobile devices, embedded systems, automotive electronics, and consumer electronics. Its high-density design and efficient performance make it suitable for smartphones, tablets, and laptops, as well as networking equipment and industrial applications requiring reliable memory solutions.

Equivalent

The MT40A512M16HA-083E:A is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83EFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA-125
4. Nanya NT5CB256M16DP-125
Always check specific parameters like speed, voltage, and timing for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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