MT40A4G8BAF-062E:B

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MT40A4G8BAF-062E:B

IC FLASH 32GBIT PARALLEL 78FBGA

  • Fabricant
  • Mfr. Partie #MT40A4G8BAF-062E:B
  • Paquet TFBGA-78
  • Fiche de données
  • En stock2186

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Spécifications

Package Tray
Series TwinDie™
ProductStatus Last Time Buy
MemoryType Non-Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 32Gb (4G x 8)
MemoryInterface Parallel
ClockFrequency 1.6 GHz
AccessTime 13.75 ns
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 78-TFBGA

Vue d'ensemble

Description

The MT40A4G8BAF-062E:B is a DRAM (Dynamic Random Access Memory) chip manufactured by Micron Technology. It belongs to the DDR4 (Double Data Rate 4) family, which is widely used in computing applications for its improved performance and efficiency compared to previous generations.
Key specifications include a 4 GiB capacity, a 64-bit data bus, and a speed grade of 2400 MT/s (megatransfers per second). The device operates at a voltage of 1.2V, which contributes to lower power consumption and heat generation, making it suitable for laptops, desktops, and servers.
The 'E' in the part number typically indicates a revision or specific feature set, while the 'B' designates a specific packaging or processing version. The MT40A4G8BAF-062E:B is often used in high-performance applications where speed and efficiency are critical. Overall, it is a reliable choice for modern memory needs.

Features

The MT40A4G8BAF-062E:B is a high-performance DDR4 DRAM memory component from Micron. Key features include:
1. Density: 4 gigabits (Gb), organized as 512 Megabytes (MB) x 8 bits.
2. Data Rate: Supports data rates up to 2400 MT/s, enabling high-speed data transfer.
3. Voltage: Operates at a low supply voltage of 1.2V, enhancing power efficiency.
4. Package Type: Available in a compact 78-ball FBGA package, facilitating space-saving designs.
5. DDR4 Features: Incorporates advanced features like on-die termination (ODT) and variable burst lengths to optimize performance and reduce latency.
6. Applications: Suitable for a variety of applications, including servers, networking equipment, and high-performance computing.
Overall, the MT40A4G8BAF-062E:B offers a blend of speed, efficiency, and versatility, making it ideal for modern computing needs.

Package

The MT40A4G8BAF-062E:B is a DDR3 SDRAM memory chip packaged in a 78-ball FBGAs (Fine Ball Grid Array) format. This packaging allows for high-density mounting on circuit boards, suitable for various applications in computers and electronics.

Pinout

The MT40A4G8BAF-062E:B is a DDR4 SDRAM memory chip manufactured by Micron. It features a pin count of 78 pins, arranged in a 7mm x 7mm BGA (Ball Grid Array) package.
This memory module is designed for high-performance applications, offering a data rate of up to 2400 MT/s and a density of 4 Gb (gigabits). Key functionalities include:
- Data Transfer: Supports burst lengths of 8 and 16, allowing for efficient data access and transfer.
- Power Management: Operates at a nominal voltage of 1.2V, enhancing energy efficiency.
- Functionality: Implements features like on-die termination (ODT) and various operating modes to optimize performance and reliability.
The MT40A4G8BAF-062E:B is suitable for use in a variety of applications, including computing and mobile devices, where high-speed memory access is crucial.

Manufacturer

The manufacturer of the MT40A4G8BAF-062E:B is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile devices, automotive, and the Internet of Things (IoT). The company is known for its innovation in memory technologies and plays a significant role in the semiconductor industry.

Application

The MT40A4G8BAF-062E:B is a DDR3 SDRAM memory chip widely used in applications such as smartphones, tablets, laptops, and other computing devices. Its high-density and low-power features make it suitable for mobile applications, automotive systems, and embedded devices. Additionally, it is utilized in network equipment and servers for efficient data processing and storage solutions.

Equivalent

The MT40A4G8BAF-062E:B is a DDR4 DRAM memory chip. Equivalent products may include:
1. Samsung K4A4G085WB-BCRC
2. Hynix H5AN8G6NBJR
3. Micron MT40A4G8BAE-062E
4. Nanya NT5CC128M16ER-EK
Always verify compatibility before substituting components based on specifications such as speed, voltage, and timings.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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