MT40A2G4SA-062E:R

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MT40A2G4SA-062E:R

MOD DRAM 8GBIT PARALLEL 78FBGA

  • Fabricant
  • Mfr. Partie #MT40A2G4SA-062E:R
  • Paquet FBGA-78
  • Fiche de données
  • En stock3174

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Spécifications

Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 8Gb (2G x 4)
MemoryInterface Parallel
ClockFrequency 1.6 GHz
WriteCycleTime-WordPage 15ns
AccessTime 19 ns
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 78-TFBGA

Vue d'ensemble

Description

The MT40A2G4SA-062E:R is a high-performance DRAM (Dynamic Random Access Memory) module produced by Micron Technology. This component is part of the DDR4 (Double Data Rate 4) memory family, designed for use in a variety of computing applications, including desktops, laptops, and servers.
Key specifications include:
- Capacity: 8GB (Gigabytes)
- Data Rate: 2400 MT/s (Mega Transfers per second), indicating a fast data transfer capability.
- Voltage: Operates at 1.2V, which contributes to energy efficiency.
- Form Factor: Typically available in DIMM (Dual In-line Memory Module) or SO-DIMM (Small Outline DIMM) configurations, depending on the application.
This memory module is ideal for enhancing system performance, enabling faster data processing and improved multitasking capabilities. It is compatible with a wide range of motherboards and supports various memory architectures, making it a versatile choice for both consumer and enterprise systems.

Features

The MT40A2G4SA-062E is a 4GB DDR3 SDRAM memory module manufactured by Micron Technology. Key features include:
1. Type: DDR3 SDRAM.
2. Capacity: 4GB.
3. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
4. Configuration: 512 Meg x 64 bits organization, suitable for dual-channel memory architectures.
5. Voltage: Operates at a low voltage of 1.5V, which helps in power savings.
6. Form Factor: SO-DIMM, designed for laptops and compact devices.
7. Compatibility: Compatible with various laptops and motherboards that support DDR3.
8. Latency: CL11, which indicates the number of clock cycles it takes to access data.
9. ECC: Usually, modules like this may support ECC (Error Correction Code) for improved reliability in server or workstation environments, but specific support should be verified based on application.
Overall, the MT40A2G4SA-062E is ideal for enhancing performance in memory-intensive applications.

Package

The MT40A2G4SA-062E:R is packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of package is used for high-density memory chips, providing efficient thermal performance and space-saving design suitable for various applications, including mobile devices and memory modules.

Pinout

The MT40A2G4SA-062E:R is a DDR4 SDRAM device from Micron Technology. It has a pin count of 78 pins and is designed in a 78-ball FBGA (Fine Pitch Ball Grid Array) package.
The primary functions of this memory chip include providing high-speed data transfer rates and increased bandwidth for applications requiring efficient memory performance. It operates at a voltage of 1.2V, supports data rates of up to 2400 MT/s, and offers a capacity of 2 Gb (Gigabits). The device features multiple banks (typically 16) to allow for simultaneous data access, enhancing its performance in computing environments. It also supports advanced features like on-die termination and a burst length of 8, making it suitable for a variety of applications, including mobile devices, laptops, and servers.

Manufacturer

The manufacturer of the MT40A2G4SA-062E:R is Micron Technology, Inc. Micron is a leading American producer of computer memory and data storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, including computing, mobile, automotive, and industrial applications. The company is recognized for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The MT40A2G4SA-062E:R is a DDR4 SDRAM memory chip used in various application areas, including servers, networking equipment, industrial automation, telecommunications, and high-performance computing. Its high speed and efficiency make it suitable for data-intensive tasks, such as cloud computing and big data analytics, as well as in consumer electronics like PCs and gaming systems.

Equivalent

The MT40A2G4SA-062E:R chip, a 2GB DDR3 SDRAM, can have equivalent products such as:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646F-BCRC
3. Micron MT41K256M16HA-125
4. Nanya NT5CB256M16DP-DI
Ensure compatibility in terms of specifications like speed, voltage, and package type when selecting alternatives.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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