MT40A256M16GE-083E:B

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MT40A256M16GE-083E:B

IC DRAM 4GBIT PAR 1.2GHZ 96FBGA

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  • Mfr. Partie #MT40A256M16GE-083E:B
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  • En stock4494

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Spécifications

Part Status Obsolete
Base Product Number MT40A256M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 1.2 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x14)
Packaging Tray

Vue d'ensemble

Description

The MT40A256M16GE-083E:B is a memory chip manufactured by Micron Technology. It is a DDR4 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) designed for high-performance computing applications. This specific model features a density of 4GB, organized as 256 Meg x 16 bits, and operates at a data rate of up to 2400 MT/s (million transfers per second) with a supply voltage of 1.2V.
The "083E" in the part number typically indicates the speed grade and other specifications, while the "B" signifies a specific version or revision of the chip. It is used commonly in applications like servers, personal computers, and embedded systems where fast data access and high bandwidth are crucial. The MT40A256M16GE-083E:B supports various features like burst lengths of 8 or 4, and has built-in thermal and power management capabilities to enhance performance and efficiency.

Features

The MT40A256M16GE-083E:B is a DRAM memory chip manufactured by Micron Technology. Key features include:
1. Type: DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic RAM).
2. Capacity: 4GB (256Mx16 configuration).
3. Speed: Operates at a data rate of 2400 MT/s.
4. Voltage: Typical operating voltage of 1.2V.
5. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
6. Density: It features a density of 4Gb, capable of providing high performance for various applications.
7. Latency: Supports low latency performance suitable for demanding computing tasks.
8. Features: Includes on-die termination (ODT) and is designed to be energy-efficient, making it suitable for mobile and embedded systems.
This memory chip is ideal for use in laptops, desktops, and various electronic devices that require reliable and high-speed memory solutions.

Package

The MT40A256M16GE-083E:B is a DRAM memory chip packaged in a 78-ball VFBGA (Very Fine Ball Grid Array) format. This package type is designed for high-density applications, providing a compact footprint and efficient thermal performance.

Pinout

The MT40A256M16GE-083E:B is a DRAM memory chip manufactured by Micron Technology. It features a total of 78 pins. This device is a DDR3 SDRAM, with a configuration of 256 Meg x 16 bits, which provides a data width of 16 bits and a density of 256 Megabits.
The primary functions of the pins include:
- Data pins (DQ0-DQ15): For data input/output.
- Address pins (A0-A11): For addressing memory locations.
- Control pins (CS, RAS, CAS, WE): For command and control signals to read/write data.
- Clock pins (CK, CK#): For clock signal to synchronize data transactions.
- Power and ground pins (VDD, VSS): For power supply and grounding.
This chip supports various memory operations, including read, write, and refresh cycles, essential for operation in computing systems.

Manufacturer

The manufacturer of the MT40A256M16GE-083E:B is Micron Technology, Inc. Micron is a leading global provider of advanced semiconductor solutions, specializing in memory and storage technologies. The company produces DRAM, NAND flash memory, and NOR flash memory, as well as other types of memory products used in various applications, including computing, mobile devices, automotive, and data centers. Founded in 1978 and headquartered in Boise, Idaho, Micron is recognized for its innovations in memory technology and plays a crucial role in the semiconductor industry. As a major player, Micron focuses on research and development to enhance the performance and efficiency of its products while addressing the growing demands for data storage and processing capabilities worldwide.

Application

The MT40A256M16GE-083E:B is a DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, networking equipment, industrial systems, telecommunications, and automotive electronics. It provides high-density memory solutions for devices requiring efficient performance and low power consumption, including laptops, desktops, servers, and embedded systems.

Equivalent

The MT40A256M16GE-083E:B chip is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR-PBC
2. Micron MT41K256M16HA-125
3. Samsung K4B4G1646F-BCK0
4. Nanya NT5CB256M16DP-125
Ensure compatibility with your specific application before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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