MT40A1G8SA-062E:R

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MT40A1G8SA-062E:R

IC DRAM 8GBIT PARALLEL 78FBGA

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  • Mfr. Partie #MT40A1G8SA-062E:R
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Spécifications

Part Status Obsolete
Base Product Number MT40A1G8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 8Gbit
Memory Organization 1G x 8
Memory Interface Parallel
Clock Frequency 1.6 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (7.5x11)
Packaging Bulk
Access Time 19 ns

Vue d'ensemble

Description

The MT40A1G8SA-062E:R is a high-performance DRAM (Dynamic Random Access Memory) chip produced by Micron Technology. This specific model is a DDR4 SDRAM memory module, designed for various applications in computing and mobile devices. It typically features a capacity of 8 gigabits (1 GB), operates at a voltage of 1.2 volts, and supports data rates up to 3200 MT/s (megatransfers per second).
The "A1" in the part number indicates a specific die revision, while the "G8" denotes a specific technology node. The "SA" refers to the component's organization and type. The suffix "062E" represents the package type and design specifications, which can include dimensions and pin layout. The "R" at the end often indicates that it is a lead-free, RoHS-compliant version.
This memory chip is primarily used in servers, desktops, and laptops, offering improved efficiency, speed, and power management compared to previous DDR generations, making it suitable for modern computing demands.

Features

The MT40A1G8SA-062E:R is a DRAM memory chip from Micron Technology, specifically designed for mobile applications. Here are its key features:
1. Type: DDR3L SDRAM (Low Voltage)
2. Density: 1GB (Gigabyte)
3. Organization: 8 bits x 8 banks
4. Voltage: Operates at 1.35V, allowing for lower power consumption compared to standard DDR3.
5. Speed: Supports data rates up to 1600 MT/s (megatransfers per second).
6. Package: Available in a small BGA (Ball Grid Array) package for efficient space utilization on circuit boards.
7. Thermal and Power Management: Features help optimize power efficiency, suitable for battery-operated devices.
8. Applications: Ideal for smartphones, tablets, and other mobile computing devices.
This memory chip provides a balance of performance and energy efficiency, making it suitable for modern mobile applications.

Package

The MT40A1G8SA-062E:R is a DRAM memory chip from Micron Technology, typically packaged in a standard FBGA (Fine Ball Grid Array) format. This package type allows for a compact design with a high pin count, facilitating improved performance and thermal management in various electronic applications.

Pinout

The MT40A1G8SA-062E:R is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a pin count of 78 pins in a FBGA (Fine Ball Grid Array) package.
The primary function of this memory chip is to provide high-speed volatile memory storage for various electronic devices, including computers, servers, and mobile devices. It operates at a voltage of 1.5V and supports a data rate of up to 1600 MT/s, making it suitable for applications requiring efficient data transfer rates.
The chip's architecture allows for a wide variety of configurations, supporting features like burst lengths, bank groups, and various modes of operation to optimize performance in systems that demand rapid data access and processing.

Manufacturer

The manufacturer of the MT40A1G8SA-062E:R is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, including computing, mobile, automotive, and industrial applications. The company is known for its innovation in memory technology, contributing to advancements in both consumer electronics and enterprise solutions. Micron plays a significant role in the semiconductor industry, focusing on producing high-performance memory products that enhance the efficiency and speed of electronic devices.

Application

The MT40A1G8SA-062E:R is a DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics like laptops and desktops, networking devices, servers, and embedded systems. Its high-speed performance and efficiency make it suitable for data-intensive tasks, gaming, and multimedia applications, as well as industrial automation and telecommunications.

Equivalent

The MT40A1G8SA-062E:R chip is a DDR3 SDRAM memory component. Equivalent products may include those from other manufacturers that offer similar specifications, such as:
1. Hynix H5TQ4G63AFR
2. Samsung K4B4G1646C
3. Micron MT41K256M16HA-125
Ensure to verify the specifications like density, speed, and voltage to confirm compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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