MT40A1G8PM-083E:A

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MT40A1G8PM-083E:A

IC DRAM 8GBIT PAR 1.2GHZ 78FBGA

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  • Mfr. Partie #MT40A1G8PM-083E:A
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  • En stock9919

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Spécifications

Part Status Obsolete
Base Product Number MT40A1G8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 8Gbit
Memory Organization 1G x 8
Memory Interface Parallel
Clock Frequency 1.2 GHz
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (9x13.2)
Packaging Tray

Vue d'ensemble

Description

The MT40A1G8PM-083E:A is a high-performance DDR4 SDRAM memory module manufactured by Micron Technology. It features a 1GB memory capacity, operates at a data rate of 2400 MT/s, and is designed for energy efficiency with a low voltage of 1.2V. The module utilizes a 64-bit wide data bus, making it suitable for a variety of applications, including high-performance computing, networking, and embedded systems.
This specific part number indicates that it is a DRAM component intended for use in devices that require reliable and fast memory solutions. With advanced features like on-die termination and a thermal sensor, the MT40A1G8PM-083E:A offers enhanced performance and reliability. Ideal for applications demanding high bandwidth and low latency, this memory module is often used in laptops, desktops, and servers. Its compatibility with various platforms makes it a versatile choice for developers and manufacturers. Overall, the MT40A1G8PM-083E:A is a robust solution for modern memory requirements.

Features

The MT40A1G8PM-083E:A is a DDR4 memory module from Micron Technology, designed for high-performance applications. Key features include:
1. Memory Size: 8GB capacity, suitable for a range of computing needs.
2. Data Rate: Operates at a data rate of 2400 MT/s (megatransfers per second), ensuring fast data processing.
3. Form Factor: SO-DIMM, ideal for laptops and compact systems.
4. Voltage: Operates at 1.2V, which enhances energy efficiency compared to previous DDR generations.
5. Latency: CL17 (CAS latency of 17), providing a balance of performance and efficiency.
6. Architecture: Supports a 64-bit wide data bus, enabling increased bandwidth.
7. ECC Support: Some variants may include error-correcting code (ECC) to improve data integrity.
8. Compatibility: Designed for compatibility with various DDR4 motherboards.
Overall, the MT40A1G8PM-083E:A is suitable for both consumer and enterprise applications, enhancing system responsiveness and multitasking capabilities.

Package

The MT40A1G8PM-083E:A is a DRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for high-density applications, offering efficient space utilization and improved thermal performance.

Pinout

The MT40A1G8PM-083E:A is a DRAM memory chip with a pin count of 78. It is a DDR3 SDRAM device, designed for high-performance applications. The chip operates at a voltage of 1.5V and has a data rate of 1066 MT/s. Its primary function is to provide high-speed memory storage for various computing applications, including personal computers, servers, and embedded systems.
The device features an 8-bit data width and supports a variety of operating modes, including burst read and write operations. It typically operates in a 1G x 8 configuration, allowing for efficient data handling and improved performance in memory-intensive tasks. Additionally, it is commonly used in dual in-line memory modules (DIMMs) for easy integration into different systems.

Manufacturer

The manufacturer of the MT40A1G8PM-083E:A is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in the design and production of dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial applications. The company is known for its innovation in memory technology and plays a critical role in the advancement of data storage solutions essential for modern electronics.

Application

The MT40A1G8PM-083E:A is a DRAM memory chip primarily used in applications like mobile devices, tablets, and laptops. It serves purposes in high-performance computing, graphics processing, and data-intensive applications such as gaming, artificial intelligence, and machine learning. Additionally, it is applicable in automotive systems and IoT devices, where efficient memory management is crucial for performance and power consumption.

Equivalent

The MT40A1G8PM-083E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA
Ensure compatibility in terms of voltage, speed, and pin configuration when selecting alternatives.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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