MT40A1G16RC-062E:B

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MT40A1G16RC-062E:B

IC DRAM 16GBIT PARALLEL 96FBGA

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  • Mfr. Partie #MT40A1G16RC-062E:B
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  • Fiche de données
  • En stock7591

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Spécifications

Part Status Obsolete
Base Product Number MT40A1G16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 1G x 16
Memory Interface Parallel
Clock Frequency 1.6 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (10x13)
Packaging Tray
Access Time 19 ns

Vue d'ensemble

Description

The MT40A1G16RC-062E:B is a DDR4 SDRAM memory chip produced by Micron Technology. It features a 1GB capacity organized in a 16-bit wide data bus, designed for various applications requiring high-speed memory, such as mobile devices, laptops, and servers. The "062E" designation indicates a specific configuration and performance level, while the "B" at the end signifies a revision or batch identifier.
Key features include a data rate of 1600 MT/s, low power consumption, and improved performance over previous DDR generations. It operates at a supply voltage of 1.2V, contributing to energy efficiency. This chip supports various memory functions, including burst mode and on-die termination, enhancing data integrity and reliability. Overall, the MT40A1G16RC-062E:B is suitable for applications needing efficient, high-capacity memory solutions.

Features

The MT40A1G16RC-062E:B is a DRAM component produced by Micron Technology, designed for high-performance applications. It is a 1GB DDR3 SDRAM memory module, featuring a wide I/O interface that operates at a data rate of 1600 MT/s (megatransfers per second), and a 16-bit data width. This memory chip is built using a 30nm process technology, ensuring lower power consumption and improved efficiency.
Key features include:
- Density: 1GB
- Type: DDR3 SDRAM
- Data Rate: 1600 MT/s
- Organization: x16
- Voltage: 1.5V standard operating voltage
- Package Type: FBGA (Fine Ball Grid Array)
- Applications: Suitable for use in various electronic devices, including laptops, desktops, and embedded systems.
This component offers reliable performance, making it ideal for consumer electronics and industrial applications that require robust memory solutions.

Package

The MT40A1G16RC-062E:B is packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of package is used for high-density memory devices, providing a compact footprint and efficient thermal performance suitable for various electronic applications.

Pinout

The MT40A1G16RC-062E:B is a DRAM memory chip with a pin count of 78. This device is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) that operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s.
The primary functions of the MT40A1G16RC-062E:B include data storage, buffering, and facilitating fast access to data for processing in various computing applications. It features a x16 data width, allowing it to transfer 16 bits of data per pin cycle, enhancing performance in memory-intensive applications.
Overall, the chip is designed for use in consumer electronics, computing devices, and other applications requiring efficient and high-speed memory solutions.

Manufacturer

The manufacturer of the MT40A1G16RC-062E:B is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. They produce a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and based in Boise, Idaho, Micron serves various markets, including consumer electronics, mobile devices, and enterprise applications. The company's innovations and advancements in memory technology play a crucial role in driving progress in computing and data storage.

Application

The MT40A1G16RC-062E:B is a DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, mobile devices, networking equipment, automotive systems, and industrial automation. It serves tasks requiring high-speed data processing, including gaming consoles, laptops, and servers, enhancing performance in data-intensive environments.

Equivalent

The MT40A1G16RC-062E:B chip is a DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ1G83EFR - DDR3 1GB
2. Samsung K4B4G1646F - DDR3 1GB
3. Micron MT40A1G16MN-062E - DDR3 1GB
Ensure compatibility with your specific application before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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3. Transfert bancaire

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