MT29F8G16ADBDAH4-IT:D

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MT29F8G16ADBDAH4-IT:D

IC FLASH 8GBIT PARALLEL 63VFBGA

  • Fabricant
  • Mfr. Partie #MT29F8G16ADBDAH4-IT:D
  • Paquet VFBGA-63
  • Fiche de données
  • En stock7206

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Spécifications

Package Bulk
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 8Gb (512M x 16)
MemoryInterface Parallel
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Vue d'ensemble

Description

The MT29F8G16ADBDAH4-IT:D is a NAND flash memory device manufactured by Micron Technology. It offers 8 gigabits of storage capacity, designed for compact and high-density applications such as smartphones, tablets, and other consumer electronics. The device is based on advanced NAND technology, ensuring fast read and write speeds along with reliable data retention.
Key features include a 1.8V operating voltage, multi-level cell (MLC) architecture, and support for various data transfer protocols. Its compact form factor allows for easy integration into various designs, while its low power consumption makes it suitable for battery-operated devices. Additionally, the device is designed for high endurance and performance, making it ideal for both consumer and industrial applications.
Overall, the MT29F8G16ADBDAH4-IT:D is a versatile memory solution that balances performance, density, and efficiency for modern digital applications.

Features

The MT29F8G16ADBDAH4-IT:D is a 8 Gb NAND Flash memory chip from Micron Technology. Key features include:
- Density: 8 Gigabits (1 GB).
- Architecture: SLC (Single-Level Cell) for enhanced reliability and endurance.
- Interface: ONFI (Open NAND Flash Interface) compliant for compatibility and performance.
- Package: Offered in a compact BGA (Ball Grid Array) package, which is suitable for various applications.
- Operating Voltage: Typically operates at 3.3V, with low power consumption characteristics.
- Read/Write Performance: High-speed data transfer rate, making it ideal for applications requiring fast access.
- Endurance: Supports a high number of program/erase cycles, suitable for demanding applications.
- Applications: Commonly used in mobile devices, solid-state drives (SSDs), and embedded systems.
This NAND Flash memory is designed to offer a balance of performance, endurance, and efficiency, making it suitable for a variety of storage applications.

Package

The MT29F8G16ADBDAH4-IT:D is a NAND flash memory device packaged in a 48-ball BGA (Ball Grid Array) format. This type of packaging provides a compact design with improved electrical performance and thermal management.

Pinout

The MT29F8G16ADBDAH4-IT:D is a NAND Flash memory device from Micron, specifically designed for use in various storage applications. It features a total of 48 pins.
The key functions of these pins include:
1. Data Pins (DQ0-DQ7): 8 data pins for input/output operations.
2. Address Pins (A0-A20): Used to select specific memory locations.
3. Control Pins:
- WE: Write Enable, controls write operations.
- RE: Read Enable, controls read operations.
- CE: Chip Enable, activates the device.
- ALE: Address Latch Enable, latches address information.
- CLE: Command Latch Enable, latches command information.
4. WP: Write Protect, for protecting data from being overwritten.
5. R/B: Ready/Busy, indicates the status of the device.
This configuration allows for efficient data storage, retrieval, and management in embedded systems.

Manufacturer

The manufacturer of the MT29F8G16ADBDAH4-IT:D is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor products. The company caters to various markets, including computing, mobile devices, automotive, and industrial applications. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in memory technology and plays a significant role in the semiconductor industry.

Application

The MT29F8G16ADBDAH4-IT:D is a NAND Flash memory device commonly used in applications such as mobile devices, consumer electronics, solid-state drives (SSDs), industrial automation, and embedded systems. Its high density and performance make it suitable for data storage in smartphones, tablets, and various computing devices, as well as in automotive and IoT applications where reliability and speed are essential.

Equivalent

The MT29F8G16ADBDAH4-IT:D is a NAND flash memory chip from Micron. Equivalent products include:
1. Hynix H27QCG8T2D1 - a similar NAND flash memory.
2. Samsung K9GAG08U0M - another alternative NAND solution.
3. Toshiba TC58NVG2S0H - comparable NAND flash memory.
Always check datasheets for specific compatibility and specifications before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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