MT29F4G16ABBDAH4-IT:D

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MT29F4G16ABBDAH4-IT:D

IC FLASH 4GBIT PARALLEL 63VFBGA

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  • Mfr. Partie #MT29F4G16ABBDAH4-IT:D
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Spécifications

Part Status Last Time Buy
Base Product Number MT29F4G16
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Bulk

Vue d'ensemble

Description

The MT29F4G16ABBDAH4-IT:D is a NAND Flash memory chip manufactured by Micron Technology. It features a 4-gigabit (512MB) capacity with a 16-bit I/O interface, designed for high-performance applications. This chip utilizes a 3D NAND architecture, which enhances storage density and efficiency while reducing power consumption.
Key specifications include a data transfer rate of up to 400 MB/s and support for multiple programming modes, ensuring versatility in various embedded systems. The "IT" designation indicates that it is optimized for industrial temperature ranges, making it suitable for demanding environments. Additionally, the "D" suffix signifies that it is a die-level part, which can be integrated into custom solutions.
Common applications include consumer electronics, automotive systems, and industrial devices, where reliable and fast data storage is crucial. Overall, the MT29F4G16ABBDAH4-IT:D NAND Flash memory offers robust performance and durability for modern electronic applications.

Features

The MT29F4G16ABBDAH4-IT:D is a NAND flash memory device manufactured by Micron Technology. Key features include:
1. Capacity: 4 Gb (Gigabits) of storage.
2. Interface: It uses a NAND interface for seamless integration with various controllers.
3. Architecture: It employs a 2-bit per cell (MLC) architecture, enabling higher storage density and performance.
4. Data Transfer Rate: Supports high-speed data transfer with fast read and write operations.
5. Endurance: Designed for a high number of program/erase cycles, enhancing durability.
6. Operating Voltage: Typically operates at 3.3V, suitable for low-power applications.
7. Temperature Range: Rated for industrial temperature ranges, making it reliable in harsh environments.
8. Package Type: Available in a compact BGA (Ball Grid Array) package, facilitating space-efficient designs.
This device is ideal for applications in consumer electronics, automotive systems, and industrial equipment, where reliable and high-capacity storage is essential.

Package

The MT29F4G16ABBDAH4-IT:D is a NAND Flash memory device packaged in a 48-ball FBGA (Fine Pitch Ball Grid Array) format. This type of packaging is designed for high-density applications, offering compact size and improved thermal performance.

Pinout

The MT29F4G16ABBDAH4-IT:D is a NAND flash memory device from Micron Technology. It features a pin count of 48 pins. This NAND flash is organized in a 4Gb density with a 16-bit data bus width.
Key functions of the pins include:
1. Data I/O (DQ0-DQ15): 16 data lines for input and output.
2. Command/Address (A0-A26): Address lines for selecting memory locations and executing commands.
3. Chip Enable (CE): Activates the memory chip.
4. Write Enable (WE): Allows data to be written into the memory.
5. Read Enable (RE): Initiates the read operation.
6. Ready/Busy (R/B): Indicates the status of the device (ready or busy).
7. Reset (RESET): Resets the device.
8. Vcc and GND: Power supply and ground connections.
The device supports various NAND commands for read, write, and erase operations.

Manufacturer

The manufacturer of the MT29F4G16ABBDAH4-IT:D is Micron Technology, Inc. Micron is a leading American producer of computer memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, including mobile, consumer electronics, and enterprise applications. The company is recognized for its innovation in memory technologies and plays a significant role in the semiconductor industry.

Application

The MT29F4G16ABBDAH4-IT:D is a NAND Flash memory device primarily used in applications such as smartphones, tablets, and other mobile devices for data storage. It is also suitable for consumer electronics, automotive systems, industrial applications, and embedded systems where high-density, reliable, and efficient non-volatile memory is required. Its features support advanced data management and performance in read/write operations.

Equivalent

The MT29F4G16ABBDAH4-IT:D chip, a 4Gb NAND Flash memory, has several equivalent products. Compatible alternatives include:
1. Hynix H27QCG8T2A
2. Samsung K9GAG08U0E
3. Micron MT29F4G16ABAEAWP
4. Toshiba THGBM5G7B2HBAIR
Always verify specifications and compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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