MT29F4G08ABBDAHC-IT:D

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MT29F4G08ABBDAHC-IT:D

IC FLASH 4GBIT PARALLEL 63VFBGA

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  • Mfr. Partie #MT29F4G08ABBDAHC-IT:D
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Spécifications

Part Status Last Time Buy
Base Product Number MT29F4G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (10.5x13)
Packaging Tray

Vue d'ensemble

Description

The MT29F4G08ABBDAHC-IT:D is a Flash memory device from Micron Technology, specifically designed for embedded applications. It features a 4 Gb (gigabit) NAND architecture, making it suitable for various storage needs in consumer electronics, automotive, and industrial applications. The device operates with a supply voltage of 3.3V and supports high-speed data transfer.
This NAND Flash includes features such as advanced error correction code (ECC), enabling reliable data storage and retrieval. It employs a toggle DDR interface, which enhances performance by allowing simultaneous read and write operations. The device is organized in pages and blocks, facilitating efficient data management and wear leveling.
The “-IT” designation indicates a temperature range suitable for industrial applications, ensuring stability under varying environmental conditions. Overall, the MT29F4G08ABBDAHC-IT:D combines high storage density with robust performance, making it an excellent choice for applications requiring reliable and efficient data storage solutions.

Features

The MT29F4G08ABBDAHC-IT:D is a NAND flash memory device from Micron Technology, designed for high-performance applications. Key features include:
1. Capacity: 4 Gb (Gigabits) of storage.
2. Interface: Supports ONFI 2.2, facilitating easy integration into various systems.
3. NAND Type: Uses 2-bit per cell (MLC) technology, providing a good balance between cost and performance.
4. Operating Voltage: Typically operates at 2.7V to 3.6V, ensuring compatibility with a wide range of devices.
5. Page Size: 4 KB page size, optimizing data management and access speed.
6. Block Size: 128 KB block size, allowing efficient erasing and programming.
7. Endurance: Rated for up to 3,000 program/erase cycles, suitable for consumer and industrial applications.
8. Temperature Range: Industrial grade (-40°C to +85°C), supporting harsh environment applications.
9. Package: Available in a compact BGA package, facilitating space-efficient designs.
This device is ideal for applications like smartphones, tablets, and embedded systems requiring reliable and high-density storage.

Package

The MT29F4G08ABBDAHC-IT:D is packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This compact design allows for efficient space utilization on PCBs while providing reliable electrical connections.

Pinout

The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory device with a pin count of 48 pins. It features a 4 GB density and operates using a NAND interface.
The primary functions of the device include:
- Data Storage: It provides non-volatile storage for data and code.
- Data Transfer: Supports high-speed data transfer through a parallel interface.
- Block Management: Includes features for block erasure and programming to optimize performance and wear leveling.
- Read and Write Operations: Facilitates random and sequential read/write capabilities.
This NAND Flash device is commonly used in applications such as mobile phones, tablets, and embedded systems due to its compact size and efficient performance.

Manufacturer

The manufacturer of the MT29F4G08ABBDAHC-IT:D is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and other related technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and manufactures a wide range of memory products for various applications, including computing, mobile devices, automotive, and enterprise storage. The company plays a significant role in advancing memory technology and is recognized for its innovation and contributions to the semiconductor market.

Application

The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory device used primarily in consumer electronics, mobile devices, and embedded systems. Its applications include smartphones, tablets, digital cameras, automotive infotainment systems, and industrial automation. The device is designed for high-density storage, data logging, and firmware updates, making it suitable for applications requiring reliable non-volatile memory.

Equivalent

The MT29F4G08ABBDAHC-IT:D is a NAND flash memory chip. Equivalent products include the Samsung K9GAG08U0M, Micron MT29F4G08ABAEAWP, and Hynix H26M31001G. Always verify compatibility based on specific application requirements and configurations.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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