MT29F4G08ABAEAWP:E

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MT29F4G08ABAEAWP:E

IC FLASH 4GBIT PARALLEL 48TSOP I

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  • Mfr. Partie #MT29F4G08ABAEAWP:E
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Spécifications

Part Status Obsolete
Base Product Number MT29F4G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Vue d'ensemble

Description

The MT29F4G08ABAEAWP:E is a NAND flash memory chip produced by Micron Technology. It features a density of 4 gigabits (Gb) and is part of the 29F series, which is designed for high-density storage applications. This chip utilizes a multi-level cell (MLC) technology, allowing it to store multiple bits per cell, thus increasing its capacity.
Key characteristics include a synchronous interface for faster data transfer rates, a typical read speed of up to 25ns, and support for various operating modes, including ONFI (Open NAND Flash Interface) compliance. The chip is ideal for applications such as smartphones, tablets, and other portable devices, where efficient storage and performance are crucial.
Additionally, it offers features like advanced error correction and wear leveling to enhance reliability and lifespan. The “E” designation typically indicates a specific manufacturing or configuration specification. Overall, the MT29F4G08ABAEAWP:E is a versatile solution for modern memory requirements in consumer electronics.

Features

The MT29F4G08ABAEAWP:E is a 4Gb NAND flash memory chip from Micron Technology. It features a monolithic design based on 3D NAND technology, which enhances storage density and performance. The chip supports both SLC (Single-Level Cell) and MLC (Multi-Level Cell) configurations, allowing flexible use cases.
Key features include:
1. Interface: Toggle DDR NAND interface for high-speed data transfer.
2. Page Size: Supports a page size of 8KB, optimizing read and write operations.
3. Block Size: Block size typically ranges from 128KB to 256KB, which improves erase efficiency.
4. Endurance: High endurance with a specified program/erase cycle life, suitable for various applications.
5. Power Management: Low power consumption modes enhance battery life in portable devices.
6. Temperature Range: Operates in a wide temperature range, making it suitable for industrial applications.
This chip is widely used in consumer electronics, automotive, and industrial applications due to its reliability and performance.

Package

The MT29F4G08ABAEAWP:E is a NAND flash memory device packaged in a WLCSP (Wafer-Level Chip Scale Package). This type of packaging offers a compact footprint suitable for space-constrained applications, allowing for efficient integration into various electronic devices.

Pinout

The MT29F4G08ABAEAWP:E is a NAND flash memory chip from Micron Technology, specifically a 4 Gb (gigabit) device. It typically features a 48-pin TSOP (Thin Small Outline Package) configuration.
The main functions of its pins include:
- Data Pins (DQ0-DQ7): 8-bit data input/output for reading and writing.
- Command Pins (WE, RE, CE): Control read and write operations.
- Address Pins (A0-A22): Used to select memory addresses during operations.
- Chip Enable (CE): Activates the chip for communication.
- Write Enable (WE): Indicates write operations.
- Read Enable (RE): Indicates read operations.
- Ready/Busy (R/B): Indicates the status of the device (ready or busy).
- Vcc and Ground (GND): Power supply pins.
This NAND flash is often used in applications like mobile devices, solid-state drives, and embedded systems for data storage.

Manufacturer

The manufacturer of the MT29F4G08ABAEAWP:E is Micron Technology, Inc. Micron is a leading American company that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and associated technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of industries, including computing, consumer electronics, automotive, and mobile devices. The company is known for its innovative products and plays a significant role in the global semiconductor industry, focusing on providing high-performance memory and storage solutions to meet the needs of its customers.

Application

The MT29F4G08ABAEAWP:E is a NAND flash memory chip commonly used in various applications such as smartphones, tablets, and consumer electronics for data storage. It is also utilized in industrial applications, automotive systems, and embedded devices due to its reliability and performance. Additionally, it supports firmware updates, data caching, and as a storage medium for multimedia content in devices.

Equivalent

The MT29F4G08ABAEAWP:E chip is a NAND flash memory device. Equivalent products may include other NAND flash chips with similar specifications from manufacturers like Micron, Samsung, Toshiba, or SK Hynix. Look for devices with comparable density (4Gb), package type, and interface. Specific equivalents can vary; consult the manufacturer's datasheets or use a cross-reference tool for precise replacements.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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