MT29F32G08CBADAWP:D

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MT29F32G08CBADAWP:D

IC FLASH 32GBIT PAR 48TSOP I

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  • Mfr. Partie #MT29F32G08CBADAWP:D
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Spécifications

Part Status Obsolete
Base Product Number MT29F32G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 32Gbit
Memory Organization 4G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Bulk

Vue d'ensemble

Description

The MT29F32G08CBADAWP:D is a NAND flash memory device manufactured by Micron Technology. It features a capacity of 32 gigabits (or 4 gigabytes) and is designed for high-performance applications, including mobile devices, consumer electronics, and embedded systems. This device utilizes a 3D NAND architecture, which enhances storage density and reliability.
Key specifications include a fast data transfer rate, typically achieved through various interface options, such as ONFI (Open NAND Flash Interface). The MT29F32G08CBADAWP:D also includes features like wear leveling, error correction, and power management to optimize performance and extend the lifespan of the memory.
The device is packaged in a compact form, suitable for space-constrained environments, and is designed to operate under a wide temperature range, making it versatile for various applications. Its reliability and efficiency make it a popular choice in modern electronic designs.

Features

The MT29F32G08CBADAWP:D is a NAND flash memory device from Micron Technology. Here are its key features:
1. Density: 32 Gb (4 GB) capacity.
2. Architecture: SLC (Single-Level Cell) for high endurance and performance.
3. Interface: x8 or x16 parallel interface, supporting fast data transfer rates.
4. Voltage Supply: Operates at a supply voltage of 2.7V to 3.6V.
5. Endurance: Typically supports a high number of program/erase cycles, making it suitable for demanding applications.
6. Temperature Range: Available in industrial-grade temperatures for reliability in harsh environments.
7. Form Factor: Offered in a compact BGA package, facilitating integration into various devices.
8. ECC Support: Error correction code (ECC) capability enhances data integrity.
Ideal for applications in consumer electronics, automotive, and industrial systems, this NAND flash memory balances performance and reliability effectively.

Package

The MT29F32G08CBADAWP:D is a NAND flash memory device packaged in a BGA (Ball Grid Array) format. Specifically, it is a 48-ball BGA package, designed for high-density and compact applications in mobile and embedded systems.

Pinout

The MT29F32G08CBADAWP:D is a NAND flash memory device from Micron Technology. It features a total of 48 pins. The primary functions of these pins include:
1. Data Inputs/Outputs (DQ0-DQ7): 8 bidirectional data lines for data transfer.
2. Command Latch Enable (CLE): Used to latch the command inputs.
3. Address Latch Enable (ALE): Used to latch the address inputs.
4. Chip Enable (CE): Activates the device for read/write operations.
5. Write Enable (WE): Controls write operations to the memory.
6. Read Enable (RE): Controls read operations from the memory.
7. Ready/Busy (R/B): Indicates the status of the device (ready or busy).
8. Reset (RESET): Resets the device.
9. Vcc: Power supply.
10. Vss: Ground connection.
11. Vref: Reference voltage for internal operations.
This device is designed for high-density storage applications, offering significant data storage capacity and performance.

Manufacturer

The manufacturer of the MT29F32G08CBADAWP:D is Micron Technology, Inc. Micron is an American global leader in the semiconductor industry, primarily known for designing and manufacturing memory and storage solutions, including DRAM, NAND flash memory, and other memory technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various sectors, including computing, mobile, consumer electronics, and automotive industries. The company focuses on innovation and quality, contributing significantly to advancements in memory technology.

Application

The MT29F32G08CBADAWP:D is a 32Gb NAND flash memory device primarily used in various applications such as smartphones, tablets, solid-state drives (SSDs), automotive systems, consumer electronics, and industrial devices. Its high-density storage and reliability make it suitable for data storage, embedded systems, and applications requiring fast read/write capabilities.

Equivalent

The MT29F32G08CBADAWP:D chip is a 32Gb NAND flash memory device from Micron. Equivalent products include:
1. Samsung K9GAG08U0M
2. Toshiba TC58NVG2S0HBAIA
3. Hynix H26M42003BFR
Always verify compatibility based on specifications like voltage, interface, and packaging.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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