MT29F2G16ABAEAWP-AIT:E

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MT29F2G16ABAEAWP-AIT:E

IC FLASH 2GBIT PARALLEL 48TSOP I

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  • Mfr. Partie #MT29F2G16ABAEAWP-AIT:E
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Spécifications

Part Status Last Time Buy
Base Product Number MT29F2G16
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Vue d'ensemble

Description

The MT29F2G16ABAEAWP-AIT:E is a NAND Flash memory chip manufactured by Micron Technology. It features a 2GB capacity and utilizes a multi-level cell (MLC) architecture, allowing it to store more data per chip. The device operates on a supply voltage of 1.8V, which enhances energy efficiency, making it suitable for mobile and embedded applications. Its interface supports ONFI (Open NAND Flash Interface) standards, ensuring compatibility with various host controllers.
This NAND Flash is designed for high-performance applications, providing fast read and write speeds. It is commonly used in consumer electronics, automotive applications, and industrial devices, where reliable data storage is critical. The part is also compliant with Pb-free and RoHS standards, aligning with environmental regulations. Overall, the MT29F2G16ABAEAWP-AIT:E is a robust solution for applications requiring efficient and durable non-volatile memory.

Features

The MT29F2G16ABAEAWP-AIT:E is a NAND flash memory chip manufactured by Micron Technology. Key features include:
1. Memory Density: 2 Gb (2 Gigabits) capacity, which is suitable for various applications requiring moderate storage.
2. Interface: Supports ONFI (Open NAND Flash Interface) 2.2, enhancing compatibility with various controllers.
3. Organization: 16 bits per input/output (I/O) with a page size typically of 2 KB and 128 pages per block.
4. Endurance: Typically rated for around 3,000 to 10,000 program/erase cycles.
5. Data Retention: Offers data retention of up to 10 years at 25°C.
6. Operating Voltage: Operates at a voltage range of 2.7V to 3.6V.
7. Temperature Range: Suitable for industrial applications with an extended temperature range.
This chip is commonly used in consumer electronics, automotive applications, and industrial systems for reliable data storage solutions.

Package

The MT29F2G16ABAEAWP-AIT:E is packaged in a TSOP (Thin Small Outline Package) form factor. This package type is commonly used for NAND flash memory devices, offering a compact design suitable for various electronic applications.

Pinout

The MT29F2G16ABAEAWP-AIT:E is a NAND flash memory device from Micron, featuring a total pin count of 48 pins.
The primary functions of the pins include:
1. Data I/O: Pins for data input and output (D0-D7 for 8-bit data).
2. Control Signals:
- CLE (Command Latch Enable): Latches command inputs.
- ALE (Address Latch Enable): Latches address inputs.
- WE (Write Enable): Indicates write operations.
- RE (Read Enable): Enables read operations.
- CE# (Chip Enable): Activates the chip for communication.
- WP# (Write Protect): Protects data from being overwritten.
- RB# (Ready/Busy): Indicates the status of the device (ready or busy).
3. Power and Ground: Pins for power supply (Vcc) and ground (GND).
4. Additional Signals: Includes pin functions for reset and other features as needed.
This device is used in various applications requiring non-volatile memory storage.

Manufacturer

The manufacturer of the MT29F2G16ABAEAWP-AIT:E is Micron Technology, Inc. Micron is an American company that specializes in semiconductor manufacturing, particularly memory and storage solutions. Founded in 1978, Micron is known for its production of DRAM, NAND flash memory, and other memory products used in various applications, including computers, mobile devices, and data centers. The company plays a significant role in the global semiconductor industry and is a key supplier to major technology companies. Micron's focus on innovation and technology development has positioned it as a leader in the memory and storage market.

Application

The MT29F2G16ABAEAWP-AIT:E is a 2Gb NAND flash memory chip used in various applications, including smartphones, tablets, digital cameras, and other portable devices. It serves as non-volatile storage for firmware, applications, and user data. Additionally, it is suitable for embedded systems, automotive electronics, and industrial applications due to its reliability and performance.

Equivalent

The MT29F2G16ABAEAWP-AIT:E chip is a NAND Flash memory device. Equivalent products include:
1. Samsung K9GAG08U0C
2. Hynix H26M52002FPR
3. Micron MT29F2G16ABAEAWP
4. Toshiba TH58TFT2S1F
Always verify compatibility with your specific application regarding voltage, interface, and timing specifications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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