MT29F2G08ABAEAWP:E

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MT29F2G08ABAEAWP:E

IC FLASH 2GBIT PARALLEL 48TSOP I

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  • Mfr. Partie #MT29F2G08ABAEAWP:E
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Spécifications

Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Vue d'ensemble

Description

The MT29F2G08ABAEAWP:E is a NAND flash memory device produced by Micron Technology. This specific model offers 2 gigabits of storage capacity and is designed for use in a variety of applications, including mobile devices, consumer electronics, and embedded systems. It features a 1.8V operating voltage for lower power consumption, which is ideal for battery-operated devices.
The device utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits of data per cell, thereby increasing storage density. It supports advanced error correction and wear leveling algorithms to enhance reliability and longevity. The MT29F2G08ABAEAWP:E is part of Micron's NAND flash family, offering high-speed data transfer rates and robust performance in demanding environments.
This NAND flash solution is packaged in a compact form factor suitable for space-constrained designs, making it a popular choice among manufacturers looking for efficient storage solutions.

Features

The MT29F2G08ABAEAWP:E is a 2GB NAND Flash memory device from Micron Technology, designed for various applications such as consumer electronics, mobile devices, and embedded systems. Key features include:
1. Density: 2GB capacity, suitable for high-density storage needs.
2. Interface: Supports ONFI 2.1/3.0 interface for efficient data transfer rates.
3. Organization: Configured as 8 bits per word with multiple page sizes, enabling flexible data management.
4. Performance: Offers fast read and write speeds, enhancing overall system performance.
5. Endurance and Reliability: Supports a high number of program/erase cycles, ensuring durability.
6. Power Management: Low power consumption modes for energy efficiency, crucial for mobile applications.
7. Temperature Range: Extended temperature range for reliability in various environmental conditions.
This device is ideal for applications requiring robust data storage and fast access times, balancing performance with power efficiency.

Package

The MT29F2G08ABAEAWP:E is packaged in a FBGA (Fine Ball Grid Array) format, which features a compact design with solder balls on the underside for mounting on printed circuit boards, offering efficient space utilization and thermal performance.

Pinout

The MT29F2G08ABAEAWP:E is a 2Gb NAND Flash memory device from Micron Technology. It features a 48-pin TSOP (Thin Small Outline Package) configuration. The primary functions of the pins include data input/output, command and control signals, and power supply connections.
Key pin functions include:
- DQ0-DQ7: Data I/O pins for 8-bit data transfer.
- WE: Write Enable, for initiating write operations.
- RE: Read Enable, for initiating read operations.
- CE: Chip Enable, to activate the chip.
- OE: Output Enable, to control data output.
- A00-A20: Address pins, for addressing memory locations.
- VCC: Power supply pin.
- GND: Ground pin.
- R/B: Ready/Busy, indicating the status of the device.
This device is commonly used in various applications, including mobile devices, consumer electronics, and embedded systems due to its high density and reliability.

Manufacturer

The manufacturer of the MT29F2G08ABAEAWP:E is Micron Technology, Inc. Micron is a leading American company that specializes in semiconductor manufacturing, particularly in memory and storage solutions. Founded in 1978, Micron produces a range of products, including DRAM, NAND flash memory, and SSDs (solid-state drives), which are widely used in consumer electronics, computing, and data storage applications. The company is known for its innovation in memory technologies and plays a significant role in the global semiconductor market. Micron’s products are integral to various industries, enabling advanced computing capabilities and data management solutions.

Application

The MT29F2G08ABAEAWP:E is a 2Gb NAND flash memory chip commonly used in applications such as smartphones, tablets, solid-state drives (SSDs), embedded systems, and other consumer electronics. Its features support data storage for operating systems, applications, multimedia files, and more, making it suitable for high-performance and reliable storage solutions in various digital devices.

Equivalent

The MT29F2G08ABAEAWP:E chip is a 2Gbit NAND flash memory. Equivalent products include:
1. Toshiba TH58NVG2S0HBAA
2. Samsung K9GAG08U0M
3. Hynix H26M21001G2
4. Micron MT29F2G08ABAEAWP (with different temperature ranges).
Ensure compatibility with your specific application requirements, such as voltage, interface, and speed.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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