MT29F2G08ABAEAH4:E

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MT29F2G08ABAEAH4:E

IC FLASH 2GBIT PARALLEL 63VFBGA

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  • Mfr. Partie #MT29F2G08ABAEAH4:E
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Spécifications

Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Bulk

Vue d'ensemble

Description

The MT29F2G08ABAEAH4:E is a NAND flash memory device produced by Micron Technology. It offers a 2GB capacity and is designed for applications requiring high-density storage solutions, such as smartphones, tablets, and embedded systems. This NAND flash utilizes a SLC (Single-Level Cell) architecture to provide reliable performance and endurance, with fast read and write speeds.
Key features include a standard 8-bit bus interface, advanced error correction capabilities, and power management functions to optimize performance and energy consumption. The device is packaged in a compact, surface-mount format, making it suitable for space-constrained applications.
With its robust architecture and reliability, the MT29F2G08ABAEAH4:E is ideal for both consumer and industrial applications, providing a cost-effective solution for data storage needs.

Features

The MT29F2G08ABAEAH4:E is a 2Gb (256MB x8) NAND Flash memory chip from Micron Technology. It features:
1. Interface: ONFI (Open NAND Flash Interface) compliant, supporting high-speed data transfer.
2. Technology: 2-bit per cell (MLC) NAND Flash, which allows for higher density and lower cost per bit.
3. Page Size: 4KB page size, with 128 pages per block, facilitating efficient data management.
4. Block Size: 128KB block size, contributing to optimized performance for read/write operations.
5. Endurance: Supports up to 3,000 program/erase cycles, suitable for consumer and industrial applications.
6. Power Consumption: Low power operation, making it energy-efficient for portable devices.
7. Temperature Range: Operates over a wide temperature range, typically from -40°C to +85°C, suitable for various environments.
8. Package: Available in a compact BGA package, facilitating integration into space-constrained designs.
This chip is commonly used in various applications, including smartphones, tablets, and embedded systems.

Package

The MT29F2G08ABAEAH4:E is a NAND flash memory chip from Micron Technology, typically offered in a BGA (Ball Grid Array) package type. This package style allows for a compact design with reliable electrical connections, suitable for various applications in consumer electronics and embedded systems.

Pinout

The MT29F2G08ABAEAH4:E is a 2Gb NAND Flash memory device from Micron Technology. It features a total of 48 pins. The primary functions of these pins include:
1. Data I/O Pins (DQ0-DQ7): Used for data transfer.
2. Command (CLE): Command latch enable, used to latch commands.
3. Address (ALE): Address latch enable, for latching addresses.
4. Chip Enable (CE): Activates the chip for communication.
5. Write Enable (WE): Initiates write operations.
6. Read Enable (RE): Initiates read operations.
7. Ready/Busy (R/B): Indicates the status of the device (ready or busy).
8. Ground (VSS): Ground connection.
9. Power (VCC): Power supply for the device.
10. Block Protection (BP) and Reset (RST): Used for block protection features and resetting the device.
This NAND Flash is commonly used in various applications such as consumer electronics, embedded systems, and data storage solutions.

Manufacturer

The manufacturer of the MT29F2G08ABAEAH4:E is Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest manufacturers of memory chips in the world. The company serves various industries, including computing, mobile devices, automotive, and data centers, providing essential components that enable advanced computing and data storage applications.

Application

The MT29F2G08ABAEAH4:E is a NAND flash memory chip used in various applications, including mobile devices, consumer electronics, automotive systems, and industrial applications. Its high capacity and reliability make it suitable for smartphones, tablets, digital cameras, solid-state drives (SSDs), and embedded systems requiring fast data storage and retrieval.

Equivalent

The MT29F2G08ABAEAH4:E chip is a NAND flash memory device. Equivalent products include the following:
1. K9GAG08U0M - Samsung NAND flash
2. W29N02G - Winbond NAND flash
3. S34ML02G1 - Cypress NAND flash
4. MBN2G08 - Micron NAND flash
Always verify specific compatibility and characteristics based on your application needs.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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