MT29F1G08ABBDAH4:D

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MT29F1G08ABBDAH4:D

IC FLASH 1GBIT PARALLEL 63VFBGA

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  • Mfr. Partie #MT29F1G08ABBDAH4:D
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  • Fiche de données
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Spécifications

Part Status Obsolete
Base Product Number MT29F1G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Bulk

Vue d'ensemble

Description

The MT29F1G08ABBDAH4:D is a 1-gigabit NAND flash memory chip manufactured by Micron Technology. It utilizes a 3D NAND architecture, which enhances storage density and performance while reducing the physical footprint. This specific model features an asynchronous interface, providing a balance between speed and power efficiency for various applications, including consumer electronics, mobile devices, and industrial uses.
Key characteristics include multi-level cell (MLC) technology, enabling higher storage capacities, and support for multiple read and write cycles, enhancing durability. It also integrates advanced error correction, wear leveling, and bad block management to ensure data integrity and longevity. The chip typically employs a serial interface for communication, making it suitable for a range of embedded systems.
Overall, the MT29F1G08ABBDAH4:D is designed to meet the growing demands for reliable and high-capacity storage solutions in modern electronic devices.

Features

The MT29F1G08ABBDAH4:D is a 1Gb (gigabit) NAND flash memory device from Micron Technology. Key features include:
- Type: NAND Flash Memory (SLC or MLC options available).
- Density: 1Gb (128MB).
- Interface: ONFI (Open NAND Flash Interface) compliant, supporting asynchronous and synchronous modes.
- Cell Architecture: Multi-Level Cell (MLC) technology, allowing multiple bits per cell for higher storage density.
- Voltage Supply: Operates at 2.7V to 3.6V, accommodating various power needs.
- Read/Write Speeds: Enhanced performance with fast read and write cycles, suitable for high-speed applications.
- Endurance: High program/erase cycles, typical for NAND flash, making it suitable for applications requiring longevity.
- Applications: Ideal for consumer electronics, mobile devices, automotive, and industrial applications where reliable storage is essential.
This device combines density, performance, and endurance for a versatile storage solution in various electronic applications.

Package

The MT29F1G08ABBDAH4:D is a NAND flash memory device packaged in a 48-ball BGA (Ball Grid Array) format. This type of package is designed for high-density applications, providing a compact and efficient solution for embedding memory in electronic devices.

Pinout

The MT29F1G08ABBDAH4:D is a NAND flash memory device from Micron Technology. It features a pin count of 48. Its primary functions include storing data and providing high-performance read/write capabilities for various applications, such as smartphones, tablets, and other embedded systems.
The key functions of the pins include:
- Data Inputs/Outputs (DQ0-DQ7): 8 data lines for bidirectional data transfer.
- Command Interface (WE, RE, CE): Control signals for writing, reading, and chip enable.
- Address Lines (A0-A21): Used to address the memory cells.
- Ready/Busy (R/B): Indicates the status of the device.
- Chip Enable (CE): Activates the device for communication.
- Write Enable (WE): Initiates the write operation.
- Read Enable (RE): Initiates the read operation.
This device is designed for high-density storage and supports various NAND flash memory protocols.

Manufacturer

The manufacturer of the MT29F1G08ABBDAH4:D is Micron Technology, Inc. Micron is an American company that specializes in semiconductor manufacturing, primarily focusing on memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a range of products including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various industries, including consumer electronics, computing, networking, and automotive sectors. Micron is known for its innovation in memory technology and is one of the leading providers in the global semiconductor market.

Application

The MT29F1G08ABBDAH4:D is a 1Gb NAND Flash memory device commonly used in applications such as mobile devices, consumer electronics, solid-state drives (SSDs), automotive systems, and industrial equipment. It serves as non-volatile storage for data, enabling fast read/write operations, high storage density, and reliability in applications requiring quick access to stored information.

Equivalent

The MT29F1G08ABBDAH4:D chip is a NAND flash memory device from Micron. Equivalent products include the Samsung K9GAG08U0M and the Toshiba TH58NVG1S3HFA. For specific applications, check compatibility with voltage, interface, and memory density to ensure proper functionality. Always refer to datasheets for detailed specifications and compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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