MT29F16G08ABABAWP:B

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MT29F16G08ABABAWP:B

IC FLASH 16GBIT PAR 48TSOP I

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  • Mfr. Partie #MT29F16G08ABABAWP:B
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Spécifications

Part Status Obsolete
Base Product Number MT29F16G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 16Gbit
Memory Organization 2G x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Bulk

Vue d'ensemble

Description

The MT29F16G08ABABAWP:B is a NAND flash memory chip produced by Micron Technology. It features a 16 Gb (gigabit) capacity, organized as 2048 pages of 8 KB each, along with a block size of 128 KB. This chip operates on a multi-level cell (MLC) architecture, allowing it to store multiple bits per cell, which enhances storage density.
Designed for consumer and industrial applications, it supports a range of interfaces, including ONFI (Open NAND Flash Interface), which ensures compatibility across various systems. The device typically supports a range of voltage levels and offers features such as advanced error correction capabilities to enhance data integrity and reliability.
Its compact form factor and efficient power management make it suitable for mobile devices, embedded systems, and automotive applications. The MT29F16G08ABABAWP:B plays a crucial role in enabling fast data storage and retrieval, meeting the demands of modern electronic devices.

Features

The MT29F16G08ABABAWP:B is a NAND Flash memory device produced by Micron Technology, featuring the following key specifications:
1. Capacity: 16 Gigabit (2 GB) storage capacity.
2. Interface: Supports ONFI (Open NAND Flash Interface) standards for high-speed data transfer.
3. Architecture: Utilizes a multi-level cell (MLC) architecture, allowing multiple bits per cell for increased density.
4. Operating Voltage: Typically operates at 2.7V to 3.6V.
5. Page Size: 8 KB page size, optimizing read and write operations.
6. Block Erase Size: 128 KB per block, facilitating efficient data management.
7. Endurance: Approximately 5,000 program/erase cycles, suitable for various applications.
8. Temperature Range: Industrial grade, operating from -40°C to +85°C.
9. Applications: Ideal for embedded systems, consumer electronics, and industrial applications requiring reliable data storage.
This device combines high performance with durability, making it suitable for a wide range of applications requiring non-volatile memory.

Package

The MT29F16G08ABABAWP:B is packaged in a 48-ball FBGA (Fine Ball Grid Array) form factor, which is designed for high-density memory applications.

Pinout

The MT29F16G08ABABAWP:B is a NAND flash memory device from Micron Technology. It features a pin count of 48 pins.
The primary functions of these pins include:
1. Data Input/Output: Pins are designated for data transfer (DQs).
2. Command Interface: Control pins for command and address inputs (CLE, ALE).
3. Chip Enable: CE# pin for activating the chip.
4. Write Enable: WE# pin for write operations.
5. Read Enable: RE# pin for read operations.
6. Ready/Busy Status: R/B# pin indicating the status of the device.
7. Power and Ground: VCC and GND pins for power supply.
8. I/O Control: Additional pins for input/output control.
This device is typically used in various applications requiring non-volatile storage, such as smartphones, tablets, and other embedded systems.

Manufacturer

The manufacturer of the MT29F16G08ABABAWP:B is Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a broad range of memory products, including DRAM, NAND flash memory, and SSDs used in various applications such as computing, mobile devices, and automotive systems. The company is known for its innovation in memory technology and plays a significant role in the global semiconductor industry.

Application

The MT29F16G08ABABAWP:B is a NAND flash memory chip primarily used in applications such as mobile devices, tablets, and consumer electronics for data storage. It is also utilized in solid-state drives (SSDs), embedded systems, automotive applications, and industrial storage solutions, enabling efficient data management and high-speed performance in various electronic devices.

Equivalent

The MT29F16G08ABABAWP:B is a 16Gb NAND flash memory chip. Equivalent products include:
1. Samsung K9GAG08U0M (16Gb NAND)
2. Hynix H26M31001G5 (16Gb NAND)
3. Micron MT29F16G08ABAEAWP (similar NAND with slight variations)
Always verify specific application requirements and compatibility before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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