MT28EW512ABA1HPC-0SIT

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MT28EW512ABA1HPC-0SIT

IC FLASH 512MBIT PARALLEL 64LBGA

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  • Mfr. Partie #MT28EW512ABA1HPC-0SIT
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Spécifications

Part Status Active
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 64-LBGA
Supplier Device Package 64-LBGA (11x13)
Base Product Number MT28EW512
Access Time 95 ns

Vue d'ensemble

Description

The MT28EW512ABA1HPC-0SIT is a high-performance NAND Flash memory chip produced by Micron Technology. It features a 512 Mb (megabit) storage capacity and is designed for embedded applications requiring reliable data retention and fast access speeds. This chip utilizes a serial interface, facilitating easy integration into various electronic devices.
Key features include advanced error correction capabilities, which enhance data integrity, and a range of power-saving modes, making it suitable for battery-operated devices. The chip is built on a 3D NAND architecture, allowing for higher density and improved performance compared to traditional planar NAND.
The MT28EW512ABA1HPC-0SIT is particularly suitable for applications in mobile devices, automotive systems, and industrial equipment, where robust performance and efficiency are critical. Its compact form factor and durability make it an ideal choice for modern electronics that demand both space efficiency and reliability.

Features

The MT28EW512ABA1HPC-0SIT is a 512Mb (64MB) NAND Flash memory device from Micron Technology. Key features include:
1. Memory Type: NAND Flash, suitable for applications requiring high-density storage.
2. Architecture: It utilizes a page-based architecture, allowing for efficient read and write operations.
3. Interface: The device supports a parallel interface, facilitating easy integration into various systems.
4. Voltage Range: Operates typically at 2.7V to 3.6V, making it compatible with a wide range of mobile and embedded applications.
5. Block Size: Contains multiple blocks, enabling efficient management of data and wear leveling.
6. Performance: Offers fast read and write speeds, enhancing overall system performance.
7. Endurance: Designed for high endurance with a capability for numerous program/erase cycles, making it suitable for demanding applications.
This NAND Flash device is ideal for use in consumer electronics, industrial devices, and automotive applications, where reliable and high-capacity storage is essential.

Package

The MT28EW512ABA1HPC-0SIT is packaged in a TSOP (Thin Small Outline Package) type, specifically a TSOP-I (8x20mm). This package is designed for space efficiency and is commonly used in memory devices.

Pinout

The MT28EW512ABA1HPC-0SIT is a NAND flash memory chip from Micron Technology. It features a total of 48 pins. The primary functions of these pins include:
1. Data I/O (D0-D7): 8 pins for data input and output.
2. Command Latch Enable (CLE): Used to latch commands.
3. Address Latch Enable (ALE): Used to latch addresses.
4. Chip Enable (CE): Activates the memory chip.
5. Write Enable (WE): Controls write operations.
6. Read Enable (RE): Controls read operations.
7. Ready/Busy (R/B): Indicates the status of the chip (ready or busy).
8. Ground (GND): Power supply ground.
9. VCC: Power supply voltage.
10. VCCQ: I/O power supply.
This NAND flash is typically used in applications requiring high-density storage, such as mobile devices and consumer electronics.

Manufacturer

The manufacturer of the MT28EW512ABA1HPC-0SIT is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in dynamic random-access memory (DRAM), flash memory, and NAND products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of industries, including computing, mobile, networking, and automotive sectors. The company is known for its innovative technologies and plays a significant role in advancing memory technology, focusing on high-performance and high-capacity products to meet the demands of modern computing applications.

Application

The MT28EW512ABA1HPC-0SIT is a 512Mb NAND Flash memory device commonly used in various applications, including smartphones, tablets, embedded systems, automotive electronics, and industrial applications. It serves as non-volatile storage for firmware, operating systems, and user data, providing reliable and high-performance memory solutions for consumer electronics and IoT devices.

Equivalent

The MT28EW512ABA1HPC-0SIT is a NOR Flash memory chip. Equivalent products may include the following:
1. S29GL512N (Spansion)
2. W25Q512JV (Winbond)
3. N25Q512A (Micron)
4. ESP32 Flash (Espressif)
Always consult the datasheets for specific compatibility and features.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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