MT28EW01GABA1HPC-0SIT

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MT28EW01GABA1HPC-0SIT

IC FLASH 1GBIT PARALLEL 64LBGA

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  • Mfr. Partie #MT28EW01GABA1HPC-0SIT
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  • En stock7706

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Spécifications

Part Status Active
Base Product Number MT28EW01
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 1Gbit
Memory Organization 128M x 8, 64M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 64-LBGA
Supplier Device Package 64-LBGA (11x13)
Packaging Tray
Access Time 95 ns

Vue d'ensemble

Description

The MT28EW01GABA1HPC-0SIT is a NAND flash memory device produced by Micron Technology. It features a density of 1 gigabit (Gb) and utilizes a Dual-Plane architecture, which allows for improved performance and efficiency in data transfer and management. This memory chip is designed for embedded applications, supporting various interfaces, including ONFI (Open NAND Flash Interface) standards.
Key characteristics include a high endurance and reliability suitable for applications like mobile devices, consumer electronics, and industrial automation. The device supports advanced features such as Wear Leveling and Bad Block Management to enhance longevity and performance.
The "-0SIT" suffix typically denotes specific packaging or temperature range specifications. Overall, the MT28EW01GABA1HPC-0SIT is engineered to meet the demanding needs of modern applications requiring fast, reliable, and efficient non-volatile memory solutions.

Features

The MT28EW01GABA1HPC-0SIT is a NAND flash memory device from Micron Technology. It features a 1Gb (gigabit) capacity with a robust architecture designed for high-performance applications. Key features include:
1. Interface: It utilizes a NAND Flash interface, compatible with standard NAND protocols.
2. Technology: Built on advanced memory technology, offering faster read/write speeds and improved endurance.
3. Data Rates: Supports high-speed data transfer rates, suitable for applications requiring quick memory access.
4. Endurance: Designed for high endurance, making it suitable for applications with frequent write cycles.
5. Power Consumption: Low power consumption, enhancing energy efficiency in portable devices.
6. Form Factor: Available in a compact package, facilitating integration into space-constrained applications.
This device is ideal for a variety of applications, including consumer electronics, automotive systems, and industrial devices, where reliability and performance are critical.

Package

The MT28EW01GABA1HPC-0SIT is a NAND flash memory chip packaged in a TSOP (Thin Small Outline Package). This package type is commonly used for memory devices due to its compact size and efficient thermal management.

Pinout

The MT28EW01GABA1HPC-0SIT is a NAND flash memory device from Micron Technology. It features a pin count of 48 pins.
The functions of these pins include:
1. Data I/O Pins (DQ0-DQ7): Used for data input/output (8 bits).
2. Command/Address Pins (A0-A5, CE, WE, RE): Control the operations like read, write, and erase.
3. Chip Enable (CE): Activates the device.
4. Write Enable (WE): Controls write operations.
5. Read Enable (RE): Controls read operations.
6. Ready/Busy (R/B): Indicates the status of the device.
7. Vcc: Power supply pin.
8. Ground (GND): Common ground connection.
9. Additional pins for features like reset and chip status.
This device is designed for high-performance applications, offering reliable data storage and fast access times.

Manufacturer

The MT28EW01GABA1HPC-0SIT is manufactured by Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a variety of markets, such as consumer electronics, computing, mobile devices, and enterprise applications. The company is recognized for its innovation in memory technologies and plays a significant role in the global semiconductor industry.

Application

The MT28EW01GABA1HPC-0SIT is a NAND Flash memory device primarily used in applications such as mobile devices, consumer electronics, industrial automation, automotive systems, and embedded systems. Its features support data storage, firmware updates, and high-performance computing tasks where reliability and speed are essential.

Equivalent

The MT28EW01GABA1HPC-0SIT is a 1Gb (128MB) NAND Flash memory chip from Micron Technology. Equivalent products include the Samsung K9F1G08U0M, Hynix H27UCG8T2BTR, and Toshiba TC58NVG0S3HBAI2. Always verify specifications for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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