MT25QU512ABB8ESF-0AAT

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MT25QU512ABB8ESF-0AAT

IC FLASH 512MBIT SPI 133MHZ 16SO

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  • Mfr. Partie #MT25QU512ABB8ESF-0AAT
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Spécifications

Part Status Active
Base Product Number MT25QU512
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface SPI - Quad I/O
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 1.7V ~ 2V
Operating Temperature -40°C ~ 105°C (TA)
Mounting Type Surface Mount
Package 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SO
Packaging Tray
Grade Automotive
Qualification AEC-Q100

Vue d'ensemble

Description

The MT25QU512ABB8ESF-0AAT is a 512Mb (64MB) NOR Flash memory device manufactured by Micron Technology. It features a Serial Peripheral Interface (SPI) with a dual and quad I/O option, allowing for high-speed data transfer and efficient memory management. This component is designed for applications in consumer electronics, automotive, and industrial sectors, where reliable and fast non-volatile storage is crucial.
Key specifications include a supply voltage of 1.8V to 3.6V, and it supports various memory modes, including standard, fast, and dual/quad SPI for flexible programming and reading. The device offers features such as uniform memory blocks, fast read times, and low power consumption, making it suitable for applications that require quick access to stored data.
The MT25QU512ABB8ESF-0AAT is often utilized in embedded systems, firmware storage, and code execution, providing a robust solution for modern electronic devices.

Features

The MT25QU512ABB8ESF-0AAT is a 512Mb (64MB) NOR Flash memory from Micron Technology. Key features include:
1. Density: 512 Megabits (64MB).
2. Interface: Serial Peripheral Interface (SPI), supporting both single and dual I/O modes.
3. Voltage Range: Operates at a supply voltage between 2.7V and 3.6V.
4. Speed: Fast read speeds up to 104 MHz in dual I/O mode.
5. Memory Organization: Page-based architecture, with a page size of 256 bytes.
6. Data Retention: Typically over 20 years at 55°C, ensuring long-term data preservation.
7. Endurance: Supports a minimum of 100,000 program/erase cycles per sector.
8. Sector Architecture: Contains multiple uniform sectors for flexibility in memory management.
9. Low Power Consumption: Designed for low power operation, suitable for battery-powered applications.
This device is ideal for applications such as consumer electronics, automotive, and industrial systems requiring reliable non-volatile memory storage.

Package

The MT25QU512ABB8ESF-0AAT is packaged in a 16-pin SOIC (Small Outline Integrated Circuit) type package. It features a standard 300-mil width and is designed for surface mount applications.

Pinout

The MT25QU512ABB8ESF-0AAT is a 512Mb (64MB) Serial NOR Flash memory device from Micron Technology. It features a total of 8 pins. The functions of these pins are as follows:
1. SCK - Serial Clock: Clock input for synchronizing data transfer.
2. CS# - Chip Select: Active-low signal to enable the device.
3. SI - Serial Input: Data input pin for sending instructions and data to the device.
4. SO - Serial Output: Data output pin for reading data from the device.
5. WP# - Write Protect: Active-low pin to enable write protection.
6. HOLD# - Hold: Active-low pin to pause the serial communication without resetting the device.
7. VCC - Power Supply: Provides the necessary operating voltage.
8. GND - Ground: Common reference point for the power supply.
This device supports various features, including Quad SPI interface and high-speed operation, making it suitable for a variety of applications.

Manufacturer

The manufacturer of the MT25QU512ABB8ESF-0AAT is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various sectors, including computing, networking, mobile, automotive, and industrial markets. The company is known for its innovative memory technologies and has a significant presence in the semiconductor industry, focusing on high-performance and reliable memory solutions for a wide range of applications.

Application

The MT25QU512ABB8ESF-0AAT is a 512 Mb NOR Flash memory device commonly used in applications such as industrial automation, automotive systems, consumer electronics, and networking equipment. It is ideal for firmware storage, code execution, and data logging due to its high-speed read capabilities and reliability. Other areas include IoT devices, telecommunications, and medical equipment, where non-volatile memory is essential for storing critical data and application software.

Equivalent

The MT25QU512ABB8ESF-0AAT chip is a 512Mb (64MB) Quad-SPI NOR flash memory. Equivalent products include:
1. Winbond W25Q512JV - 512Mb Flash
2. Micron MT25QL512ABB - Similar specifications
3. Spansion S25FL512S - 512Mb Flash memory chip
Always verify compatibility regarding voltage, pin configuration, and performance specifications before substituting.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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