MRFE6VS25L

Les images sont à titre de référence seulement

MRFE6VS25L

NXP Semiconductors Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V

  • Fabricant
  • Mfr. Partie #MRFE6VS25L
  • Paquet
  • Fiche de données
  • En stock5488

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Vue d'ensemble

Description

The MRFE6VS25L is a high-performance RF power transistor designed for various applications in the VHF and UHF frequency ranges, particularly in telecommunications and broadcasting systems. It is part of the LDMOS (Laterally Diffused Metal Oxide Semiconductor) family, which offers high efficiency, linearity, and high gain.
Key features include a maximum output power of 25 watts, a wide frequency range typically up to 1 GHz, and robust thermal performance, which makes it suitable for both linear and non-linear operation. The device is packaged in an industry-standard flange or plastic package, facilitating easy integration into RF amplifiers.
The MRFE6VS25L is particularly valued in applications like base stations, linear amplifiers, and RF front-end modules due to its reliability and performance. Designers appreciate its ability to handle high power levels while maintaining low distortion, making it ideal for modern communication systems requiring high fidelity and efficiency.

Features

The MRFE6VS25L is a high-performance RF power MOSFET designed for various applications, including RF amplification in communication systems. Key features include:
1. High Power Output: Capable of delivering high output power, making it suitable for RF power amplifiers.
2. Frequency Range: Operates efficiently in the frequency range up to 1 GHz.
3. High Gain: Offers high power gain, allowing for effective amplification with minimal distortion.
4. Low Thermal Resistance: Designed with low thermal resistance for improved heat dissipation, enhancing reliability.
5. Voltage Rating: Supports high drain-source voltage, suitable for demanding applications.
6. Robust Construction: Built to withstand harsh environments, ensuring durability in various operating conditions.
7. Package Type: Available in a metal flange package, facilitating easy mounting and heat management.
These features make the MRFE6VS25L ideal for use in commercial and military RF applications, including transmitters and linear amplifiers.

Package

The MRFE6VS25L is packaged in a TO-247 style, which is a type of power transistor package. This package provides good thermal performance and is designed for efficient heat dissipation in high-power applications.

Pinout

The MRFE6VS25L is a high-power RF MOSFET transistor used primarily in RF amplification applications. It features a total of 8 pins. The pin configuration and functions are as follows:
1. Gate (G) - Controls the MOSFET operation; typically receives the input signal.
2. Drain (D) - Connects to the output load and is where the amplified signal is taken.
3. Source (S) - Common reference point for the circuit, usually connected to ground.
4. Additional pins (for other functionalities) can include various connections for biasing, protection, or feedback, depending on the specific application.
The MRFE6VS25L is designed to operate in the VHF to UHF frequency range and is suitable for high-efficiency RF applications. Its ability to handle high power levels makes it ideal for use in transmitters and similar RF equipment.

Manufacturer

The MRFE6VS25L is manufactured by NXP Semiconductors, a global semiconductor company. NXP specializes in designing and manufacturing a wide range of products, including integrated circuits, microcontrollers, and RF power amplifiers for various applications, such as automotive, industrial, and consumer electronics. Founded in 2006 as a spin-off from Philips, NXP has established itself as a leader in the semiconductor industry, focusing on innovative solutions that drive advancements in connectivity and security. The MRFE6VS25L specifically is a high-performance RF transistor used in communications and broadcasting applications.

Application

The MRFE6VS25L is a high-performance RF power transistor commonly used in applications such as RF amplification for broadcast transmitters, industrial heating, and communication systems. It operates in the VHF and UHF frequency ranges, making it suitable for TV transmitters, mobile radio, and other wireless communication technologies. Its efficiency and power handling capabilities enable its use in both commercial and military applications.

Equivalent

The MRFE6VS25L is a high-power RF transistor. Equivalent products include the MRFE6VS25N, MRFE6S4, and MRF6V25K. Other similar devices from different manufacturers might include the BLF578, BLF2425, and MRF150. Always verify specifications and application requirements for compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire