MRF166C

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MRF166C

RF MOSFET 28V 319-07

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Spécifications

Part Status Active
Base Product Number MRF166
Technology MOSFET (Metal Oxide)
Configuration N-Channel
Frequency 30MHz ~ 500MHz
Gain 16dB
Voltage - Test 28 V
Current Rating (Amps) 4A
Current - Test 25 mA
Power - Output 20W
Voltage - Rated 65 V
Package 319-07
Supplier Device Package 319-07, Style 3
Packaging Tray

Vue d'ensemble

Description

The MRF166C is a high-performance RF power transistor designed for use in various RF amplification applications, particularly in the 1.8 to 2.1 GHz frequency range. It is a laterally diffused metal-oxide-semiconductor (LDMOS) device that offers high efficiency, high output power, and linearity, making it suitable for cellular base stations, radar systems, and other wireless communication systems.
Key features include a compact package, ease of integration, and robust thermal performance, which helps maintain reliable operation under varying conditions. The MRF166C typically delivers up to 80 watts of output power and is characterized by high gain and low distortion, ensuring quality signal amplification.
Its design allows for simplified matching, making it adaptable to different circuit configurations. Overall, the MRF166C is an excellent choice for engineers seeking reliable, efficient, and high-power RF amplification solutions in advanced communication systems.

Features

The MRF166C is an N-channel RF power transistor designed for high-frequency applications. Key features include:
1. Frequency Range: Operates effectively up to 1 GHz, suitable for RF amplification.
2. Power Output: Capable of delivering high output power, typically around 10-12 watts, making it ideal for RF transmitters.
3. High Gain: Provides significant voltage gain, enhancing signal amplification efficiency.
4. Durability: Designed with robust construction, allowing for reliable operation in demanding environments.
5. Package Type: Usually available in a metal can package, which aids in heat dissipation.
6. Thermal Stability: Designed to maintain performance over a wide temperature range.
7. Application Versatility: Suitable for use in various applications including FM and AM radio transmitters, and other RF communication devices.
These features make the MRF166C a popular choice for engineers working in RF design and telecommunications.

Package

The MRF166C is housed in a ceramic package, specifically a TO-247 style. This package is designed for high power applications, providing excellent thermal performance and reliability for RF and microwave power amplification.

Pinout

The MRF166C is a high-power RF transistor designed for use in various applications, including RF amplification. It typically comes in a TO-220 package and has a pin count of 3. The functions of these pins are as follows:
1. Collector (C): This pin is used to connect to the high-voltage supply and is where the RF output is taken from.
2. Base (B): This pin is the control input for the transistor, used to drive the transistor into its active region for amplification.
3. Emitter (E): This pin connects to ground or the negative side of the DC power supply, allowing the flow of current out of the transistor.
In summary, the MRF166C has 3 pins (Collector, Base, Emitter) with specific roles in RF amplification circuits.

Manufacturer

The MRF166C is manufactured by NXP Semiconductors, a global semiconductor company. NXP specializes in designing and manufacturing a wide range of semiconductor products, including integrated circuits, microcontrollers, and RF power amplifiers, which are used in various applications such as automotive, industrial, networking, and communications. Established in 2006 as a spin-off from Philips, NXP is known for its innovation in secure connectivity and processing solutions. The MRF166C specifically is a high-power RF transistor widely used in applications like radio frequency amplifiers and communication systems.

Application

The MRF166C is a high-power RF transistor primarily used in RF amplification applications, such as in commercial and industrial RF transmitters, linear amplifiers, and communication systems. Its capabilities make it suitable for UHF and VHF frequency ranges, including television and radio broadcasting, as well as in wireless communication devices. Additionally, it is utilized in radar systems and other RF applications requiring high efficiency and power output.

Equivalent

The MRF166C is a high-power RF transistor designed for UHF applications. Equivalent products include the MRF186, MRF157, and the MRF150, as well as the BLP10 and BLP11 series. Always verify the specifications to ensure compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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