MRF1513NT1

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MRF1513NT1

FET RF 40V 520MHZ PLD-1.5

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Spécifications

Supplier NXP USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
TransistorType LDMOS
Frequency 520MHz
Gain 15dB
Voltage-Test 12.5 V
CurrentRating(Amps) 2A
Current-Test 50 mA
Power-Output 3W
Voltage-Rated 40 V
Package/Case PLD-1.5

Vue d'ensemble

Description

The MRF1513NT1 is a high-power, N-channel RF power transistor designed for use in RF applications, particularly in the 1.8 to 2.0 GHz frequency range. It is housed in a TO-220 package, providing effective thermal management, which is crucial for high-power operations.
Key features include a high gain and efficiency, making it suitable for linear and nonlinear amplification, such as in amplifiers for cellular base stations and other communication systems. The transistor supports a maximum output power of around 50 watts, with a typical gain of 14 dB at 1930 MHz.
The device operates with a maximum drain-source voltage of 50V and has a robust thermal resistance, making it reliable in various operating conditions. Users must consider proper heat sinking and thermal management practices to ensure optimal performance and longevity.
Overall, the MRF1513NT1 is a versatile component for engineers designing high-frequency RF power amplifiers, balancing performance, and thermal efficiency effectively.

Features

The MRF1513NT1 is a high-power RF transistor designed for use in UHF and VHF applications, particularly in the 150-520 MHz frequency range. Key features include:
1. Type: N-channel MOSFET.
2. Power Output: Capable of delivering high output power (up to 150 watts in certain configurations).
3. Frequency Range: Optimized for operation in the UHF/VHF bands.
4. Gain: High power gain, typically around 15 dB or more, depending on operating conditions.
5. Efficiency: Designed for high efficiency, making it suitable for linear and non-linear amplification.
6. Package: Housed in a rugged ceramic package that provides good thermal performance.
7. Applications: Commonly used in linear amplifier stages, RF transmitters, and communication systems.
8. Thermal Stability: Good thermal characteristics for reliable operation.
Overall, the MRF1513NT1 is ideal for professional RF applications requiring robust performance and reliability.

Package

The MRF1513NT1 is packaged in a 4-lead plastic package known as a "TO-220." This type of packaging is designed for efficient thermal management and is commonly used for RF power transistors.

Pinout

The MRF1513NT1 is a high-power transistor designed for RF applications, specifically in the UHF frequency range. It is housed in a standard plastic package, typically with a pin count of 4. The main functions of its pins are:
1. Pin 1 (Base): Controls the transistor's operation; applies input signal.
2. Pin 2 (Collector): Connects to the power supply; where the output is taken.
3. Pin 3 (Emitter): Ground or common reference point; allows current to flow out of the transistor.
4. Pin 4 (Base): Another base connection for better thermal management and performance.
The MRF1513NT1 is used for applications such as RF amplification in communication systems, providing high linearity and efficiency.

Manufacturer

The MRF1513NT1 is manufactured by NXP Semiconductors, a global semiconductor company based in the Netherlands. NXP focuses on providing high-performance mixed-signal and standard product solutions for a wide range of applications, including automotive, industrial, and Internet of Things (IoT) markets. They are known for their expertise in RF (radio frequency) technology, which is utilized in various communication and broadcasting applications. NXP is recognized for its innovation and development of advanced semiconductor solutions that enhance connectivity, security, and efficiency in electronic devices.

Application

The MRF1513NT1 is a high-power N-channel RF MOSFET primarily used in RF amplification applications. Its application areas include cellular base stations, industrial RF heating, and broadcast transmitters. It is suitable for linear and saturated operation in the VHF and UHF frequency ranges, making it ideal for use in communications systems and other RF power applications requiring high efficiency and linearity.

Equivalent

Equivalent products to the MRF1513NT1 chip include the MRF1513N, MRF1513, and other similar RF power transistors suitable for applications in RF amplification, particularly in the 450-470 MHz frequency range. Always check the specific datasheets for detailed specifications to confirm compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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