MRF101AN

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MRF101AN

RF TRANSISTOR 100W TO-220

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Spécifications

Supplier NXP USA Inc.
Package Tube
ProductStatus Active
TransistorType LDMOS
Frequency 1.8MHz ~ 250MHz
Gain 21.1dB
Voltage-Test 50 V
CurrentRating(Amps) 10µA
Current-Test 100 mA
Power-Output 115W
Voltage-Rated 133 V
Package/Case TO-220-3

Vue d'ensemble

Description

The MRF101AN is a high-power, LDMOS (laterally-diffused metal-oxide-semiconductor) transistor designed for RF (radio frequency) applications. It operates efficiently in the frequency range of 1.8 to 2.2 GHz, making it suitable for various communication systems, including cellular and satellite transmitters.
This transistor features a rugged construction, allowing it to handle high levels of output power, typically up to 100 watts, which is essential for maintaining signal integrity over long distances. The MRF101AN is known for its high gain, making it effective in amplifying RF signals, and it offers excellent thermal stability due to its design.
The device typically comes in a metal package, which enhances heat dissipation, and it is compatible with standard RF circuit designs, simplifying integration into existing systems. Overall, the MRF101AN is a reliable choice for engineers seeking robust performance in high-frequency RF amplification applications.

Features

The MRF101AN is a high-power RF transistor designed for applications in the 1.8 to 30 MHz frequency range. Key features include:
1. Type: N-channel enhancement-mode MOSFET.
2. Power Output: Capable of delivering high output power, typically around 100 watts.
3. Voltage Rating: Maximum VDS (drain-source voltage) is around 50 volts.
4. Current Handling: Can handle high drain current, with a maximum rating of approximately 10 A.
5. Efficiency: Designed for high efficiency in RF applications.
6. Thermal Management: Features robust thermal performance, allowing for effective heat dissipation.
7. Package: Usually available in a metal can package for enhanced thermal conductivity.
8. Applications: Commonly used in RF amplifiers, transmitters, and other communication equipment.
The MRF101AN is ideal for amateur radio, industrial, and commercial RF applications, offering reliability and performance in demanding environments.

Package

The MRF101AN is typically packaged in a metal can (TO-39) package. This type of package is designed for high-frequency applications and provides good thermal conductivity and shielding.

Pinout

The MRF101AN is a high-power RF transistor, primarily used in RF amplification applications. It features a 4-pin configuration.
Pin Count and Functions:
1. Pin 1 (Base): Controls the transistor's operation, allowing for signal amplification.
2. Pin 2 (Collector): Connects to the power supply, where the amplified output signal is taken.
3. Pin 3 (Emitter): This pin serves as the output, providing the amplified current.
4. Pin 4 (Case/Chassis): Typically connected to ground for heat dissipation and shielding.
The MRF101AN is designed for high-frequency applications and provides excellent power gain and efficiency in RF systems.

Manufacturer

The MRF101AN is manufactured by NXP Semiconductors, a global semiconductor company based in the Netherlands. NXP specializes in designing and manufacturing a wide range of products, including microcontrollers, integrated circuits, and RF power transistors used in various applications such as telecommunications, automotive, and industrial sectors. NXP is known for its commitment to innovation and quality in the semiconductor industry, focusing on enabling secure connections and infrastructure for a smarter world.

Application

The MRF101AN is a high-power RF transistor primarily used in applications such as RF power amplifiers for broadcast transmitters, industrial heating, and communication systems. It operates in the VHF and UHF bands, making it suitable for television, radio, and mobile communications, as well as in radar systems and other high-frequency applications. Its robust design allows for efficient performance in demanding environments.

Equivalent

The MRF101AN is a RF power MOSFET designed for RF applications. Equivalent products include the MRF101A, MRF150, and MRF300. Additionally, alternatives may include the BLF178, BLF188, and other RF power transistors from manufacturers like NXP, Infineon, and Toshiba. Always check specifications for compatibility in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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2. Carte de crédit/débit

3. Transfert bancaire

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