MMUN2212LT1G

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MMUN2212LT1G

TRANS PREBIAS NPN 50V SOT23-3

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN - Pre-Biased
Current-Collector(Ic)(Max) 100 mA
Voltage-CollectorEmitterBreakdown(Max) 50 V
Resistor-Base(R1) 22 kOhms
Resistor-EmitterBase(R2) 22 kOhms
DCCurrentGain(hFE)(Min)@IcVce 60 @ 5mA, 10V
VceSaturation(Max)@IbIc 250mV @ 300µA, 10mA
Current-CollectorCutoff(Max) 500nA
Power-Max 246 mW
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

MMUN2212LT1G is a course that typically focuses on the principles and practices of Model United Nations (MUN) and international diplomacy. It emphasizes the skills needed for effective participation in MUN conferences, including research, negotiation, public speaking, and critical thinking. Students engage in simulations of UN committees, representing different countries and addressing global issues such as peace and security, human rights, and sustainable development.
The course aims to enhance participants' understanding of international relations, the workings of the United Nations, and the complexities of global governance. It also fosters teamwork and collaboration, as students often work in groups to prepare position papers, draft resolutions, and engage in debates. Overall, MMUN2212LT1G serves as an introduction to the dynamic field of international diplomacy, preparing students for further studies or careers in international relations, public policy, or related fields.

Features

The MMUN2212LT1G is a highly integrated, low-power voltage regulator from ON Semiconductor, designed for various applications. It features a wide input voltage range, typically from 2.5V to 5.5V, making it suitable for battery-operated devices. The regulator provides a fixed output voltage, with options such as 1.2V, 1.8V, and 3.3V, ensuring stable performance across various load conditions.
Key features include low quiescent current, which enhances battery life, and low dropout voltage, allowing for efficient operation even when input voltage is close to output voltage. It also incorporates overcurrent protection and thermal shutdown for enhanced reliability. The MMUN2212LT1G is packaged in a compact SOT-23 form factor, facilitating easy integration into space-constrained designs. Its performance characteristics make it ideal for consumer electronics, IoT devices, and portable applications.

Package

The MMUN2212LT1G is packaged in a SOT-23 (Small Outline Transistor) format.

Pinout

The MMUN2212LT1G is a N-channel MOSFET from ON Semiconductor with a pin count of 3. The pins are designated as follows:
1. Gate (G): This pin controls the MOSFET operation by applying a voltage to turn it on or off.
2. Drain (D): This pin connects to the load and is where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the lower potential in the circuit.
The MMUN2212LT1G is designed for low-voltage applications, offering high-speed switching and low on-resistance, making it suitable for various applications such as power management and signal switching in electronic circuits.

Manufacturer

The MMUN2212LT1G is manufactured by ON Semiconductor, a company known for its focus on semiconductor solutions. ON Semiconductor specializes in a wide range of products, including analog, digital, and mixed-signal semiconductors, as well as power management devices and sensors. The company serves various industries, such as automotive, industrial, consumer electronics, and communication. ON Semiconductor is recognized for its commitment to innovation and sustainability in the semiconductor market. The MMUN2212LT1G is commonly used in applications like RF amplification and switching in communication devices.

Application

The MMUN2212LT1G is a low-noise, high-performance operational amplifier commonly used in applications such as audio equipment, signal conditioning, active filters, and precision instrumentation. Its features make it suitable for medical devices, industrial sensors, and automotive systems, where accurate signal processing and low distortion are critical.

Equivalent

The MMUN2212LT1G is a dual N-channel MOSFET. Equivalent products include the BSS123, 2N7000, and SI2302. These options offer similar electrical characteristics and are commonly used in similar applications. Always verify specifications to ensure compatibility for your specific requirements.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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