MMBTA56LT1G

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MMBTA56LT1G

TRANS PNP 80V 0.5A SOT23-3

  • Fabricant
  • Mfr. Partie #MMBTA56LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock2233

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 500 mA
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 250mV @ 10mA, 100mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 100 @ 100mA, 1V
Power-Max 225 mW
Frequency-Transition 50MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

The MMBTA56LT1G is a N-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance (RDS(on)), high breakdown voltage, and fast switching times, making it suitable for power management, motor control, and other electronic applications. The device typically operates at a maximum drain-source voltage (VDS) of around 60V and can handle considerable current, making it ideal for various power electronics tasks.
Key characteristics include high thermal stability and efficiency, which contribute to its popularity in consumer electronics, automotive systems, and industrial applications. The MMBTA56LT1G is typically packaged in a compact surface-mount format, enabling efficient space utilization on printed circuit boards (PCBs). Its performance attributes help designers achieve better energy efficiency and reliability in their circuits. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The MMBTA56LT1G is a high-performance NPN transistor designed for general-purpose switching and amplification applications. Key features include:
1. Voltage Rating: The maximum collector-emitter voltage (Vce) is 45V, making it suitable for various applications.
2. Current Rating: It can handle a collector current (Ic) up to 0.8A, allowing for efficient power handling.
3. Gain: The transistor offers a current gain (hFE) range of 100 to 600, which enhances its performance in amplification circuits.
4. Package Type: It comes in a surface-mount SOT-23 package, facilitating compact designs and ease of integration into printed circuit boards (PCBs).
5. Low Saturation Voltage: It features a low Vce(sat) of around 0.3V at high currents, improving efficiency in switching applications.
6. High-Speed Switching: Suitable for high-speed applications, it has fast switching times, making it ideal for use in digital circuits or RF applications.
Overall, the MMBTA56LT1G is versatile for various electronic applications, including signal amplification and switching tasks.

Package

The MMBTA56LT1G is packaged in a SOT-23 form factor. This surface-mount package is known for its compact size and is commonly used in various electronic applications for transistors.

Pinout

The MMBTA56LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It has a total of 3 pins.
Pin Configuration:
1. Base (B) - The control terminal that regulates the current flow between the collector and the emitter.
2. Collector (C) - The terminal where the output current flows out; it is connected to the load.
3. Emitter (E) - The terminal from which the output current exits the transistor.
Typical Applications:
- Signal amplification
- Switching in electronic circuits
Key Characteristics:
- It is housed in a SOT-23 package
- It provides low saturation voltage and high current gain.
For additional specifications, refer to the manufacturer's datasheet.

Manufacturer

The manufacturer of the MMBTA56LT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of electronic components and systems. The company specializes in products for various applications, including automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its focus on energy-efficient solutions and innovations in power management, sensing, and connectivity technologies.

Application

The MMBTA56LT1G is a NPN transistor commonly used in low-power amplification and switching applications. It's suitable for signal processing, audio amplifiers, and RF applications. Typical areas include consumer electronics, industrial control systems, and communication devices where efficient performance in compact designs is required. Its high gain and low saturation voltage make it ideal for various electronic circuits.

Equivalent

The MMBTA56LT1G is a general-purpose NPN transistor. Equivalent products include the 2N3904, 2N2222, and BC547. When selecting an equivalent, consider parameters like current rating (Ic), voltage rating (Vce), and package type to ensure compatibility for your application. Always check the specific datasheets for detailed specifications to confirm equivalence.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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