MMBT5551LT3G

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MMBT5551LT3G

TRANS NPN 160V 0.6A SOT23-3

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Spécifications

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 160 V
VceSaturation(Max)@IbIc 200mV @ 5mA, 50mA
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 80 @ 10mA, 5V
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

The MMBT5551LT3G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current of 600 mA and a collector-emitter voltage of 50 V, making it suitable for a variety of electronic circuits. With a current gain (hFE) ranging from 100 to 800, it provides efficient signal amplification. The transistor comes in a compact SOT-23 package, making it ideal for space-constrained applications in consumer electronics, automotive, and industrial devices. The operating temperature range is typically from -55°C to +150°C, ensuring reliable performance in diverse environments. Its low saturation voltage and fast switching capabilities enhance efficiency in power management applications. Overall, the MMBT5551LT3G is a versatile component widely used in both hobbyist and professional electronics projects.

Features

The MMBT5551LT3G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Voltage Rating: Maximum collector-emitter voltage (Vce) of 45V.
2. Current Rating: Continuous collector current (Ic) of up to 600mA.
3. Power Dissipation: Maximum power dissipation of 500mW at room temperature.
4. Gain: High DC current gain (hFE) typically ranges from 100 to 300.
5. Package Type: Available in a SOT-23 package, which is compact and suitable for surface-mount applications.
6. Frequency Response: Transition frequency (ft) of approximately 150MHz, making it suitable for RF applications.
7. Thermal Stability: Designed for good thermal stability with a low thermal resistance.
These features make the MMBT5551LT3G suitable for various applications, including audio amplification, switching, and signal processing in consumer electronics.

Package

The MMBT5551LT3G is packaged in a SOT-23 (Surface Mount) package type. This compact package is designed for easy mounting on printed circuit boards (PCBs) and is commonly used for low-power applications.

Pinout

The MMBT5551LT3G is a NPN transistor commonly used for switching and amplification applications. It comes in a SOT-23 package, which has three pins.
Pin Configuration:
1. Emitter (E) - This pin is connected to the ground or the negative side of the circuit.
2. Base (B) - This pin is used to control the transistor’s operation; applying a voltage here turns the transistor on or off.
3. Collector (C) - This pin connects to the load or the positive side of the circuit where current flows through when the transistor is activated.
In summary, the MMBT5551LT3G has a total of 3 pins with designated functions as emitter, base, and collector.

Manufacturer

The MMBT5551LT3G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in a wide range of products, including discrete semiconductors, integrated circuits, and optoelectronics. They serve various markets, such as automotive, industrial, communications, and consumer electronics. The company focuses on providing energy-efficient solutions and innovative technologies to meet the demands of modern electronic applications.

Application

The MMBT5551LT3G is a NPN bipolar junction transistor (BJT) commonly used in low-power switching and amplification applications. It is suitable for audio and RF amplification, signal processing, and as a general-purpose transistor in consumer electronics, communication devices, and automotive applications. Its compact size makes it ideal for space-constrained designs in various electronic circuits.

Equivalent

The MMBT5551LT3G is a NPN bipolar junction transistor (BJT) commonly used for general-purpose amplification and switching. Equivalent products include the 2N5551, MMBT5551, and MMBT5551LT1. Always check the datasheet for specific parameters like voltage, current ratings, and package type to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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