MMBT5551

Les images sont à titre de référence seulement

MMBT5551

TRANS NPN 160V 600MA SOT-23

  • Fabricant
  • Mfr. Partie #MMBT5551
  • Paquet
  • Fiche de données
  • En stock2074

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 350 mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Packaging Tape & Reel (TR)

Vue d'ensemble

Description

MMBT5551 typically refers to a specific course or module in a graduate program, possibly focusing on advanced topics in molecular biology, biotechnology, or a related field. The course may cover subjects such as molecular mechanisms, biotechnological applications, and the latest research methodologies.
Students can expect to engage in both theoretical and practical components, including laboratory work, data analysis, and interpretation of scientific literature. Emphasis may be placed on innovative techniques in molecular manipulation, genetic engineering, and the ethical considerations surrounding biotechnological advancements.
By the end of the course, participants should have a deeper understanding of molecular biology principles and their applications in biotechnology, preparing them for further research or professional roles in academia, industry, or healthcare.
For specific details, consult the course syllabus or institutional resources.

Features

The MMBT5551 is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Type: NPN transistor.
2. Maximum Collector Current (Ic): Typically up to 600 mA, allowing for handling a variety of loads.
3. Maximum Collector-Emitter Voltage (Vce): Up to 50 V, suitable for many low-voltage applications.
4. DC Current Gain (hFE): Ranges from 100 to 600, providing efficient amplification.
5. Package Type: Available in TO-92 package, making it suitable for through-hole mounting.
6. Power Dissipation (Pd): Around 500 mW, enabling it to operate in moderately demanding environments.
7. Applications: Ideal for signal amplification, switching, and driver circuits in consumer electronics.
Overall, the MMBT5551 is valued for its versatility, reliability, and performance in various electronic circuits.

Package

The MMBT5551 is typically available in a surface-mount package type, specifically the SOT-23 package. This small, low-profile package is designed for easy integration into compact electronic circuits.

Pinout

The MMBT5551 is a NPN bipolar junction transistor (BJT) commonly used for switching and amplification applications. It typically comes in a TO-92 package and has three pins.
Pin Count and Functions:
1. Collector (C): This is the pin through which the main current flows out when the transistor is in operation. It is connected to the load.
2. Base (B): This pin controls the transistor's operation. A small current input to the base allows larger current to flow from collector to emitter.
3. Emitter (E): This pin is where the current exits the transistor. It is connected to the ground or negative voltage in most configurations.
In summary, the MMBT5551 has three pins: Collector, Base, and Emitter, which are used for controlling and amplifying electrical signals in various electronic applications.

Manufacturer

The MMBT5551 is manufactured by various semiconductor companies, with ON Semiconductor being one of the prominent manufacturers. ON Semiconductor is a global supplier of semiconductor components and solutions, focusing on energy-efficient technologies. They serve a wide range of industries, including automotive, industrial, and consumer electronics. The company provides a diverse portfolio of products, including analog, logic, discrete, and power semiconductors, catering to the growing demand for efficient and innovative electronic solutions.

Application

The MMBT5551 is a NPN bipolar junction transistor (BJT) commonly used in low to medium power amplification and switching applications. Its typical application areas include audio amplification, signal processing, and as a switch in digital circuits. It can also be found in consumer electronics, such as radios and televisions, as well as in various industrial and automotive applications.

Equivalent

The MMBT5551 is a NPN transistor designed for low-power switching and amplification. Equivalent products include:
1. BC547
2. 2N3904
3. 2N5088
4. 2N4401
Make sure to verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire